MOSFET 650V, 30A, E-Mode Preproduction Units
参数名称 | 属性值 |
产品种类 Product Category | MOSFET |
制造商 Manufacturer | GaN Systems |
RoHS | Details |
技术 Technology | GaN |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | GaNPX-4 |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 30 A |
Rds On - Drain-Source Resistance | 52 mOhms |
Vgs - Gate-Source Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1.6 V |
Qg - Gate Charge | 6.5 nC |
系列 Packaging | Tray |
Channel Mode | Enhancement |
工厂包装数量 Factory Pack Quantity | 100 |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved