NGTG50N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
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•
•
•
•
•
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for High Speed Switching
5
ms
Short−Circuit Capability
These are Pb−Free Devices
50 A, 600 V
V
CEsat
= 1.65 V
C
Typical Applications
•
Power Factor Correction
•
Solar Inverters
•
Uninterruptable Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ T
C
= 25°C
@ T
C
= 100°C
Pulsed collector current, T
pulse
limited by T
Jmax
Short−circuit withstand time
V
GE
= 15 V, V
CE
= 400 V,
T
J
≤
+150°C
Gate−emitter voltage
Power Dissipation
@ T
C
= 25°C
@ T
C
= 100°C
Operating junction temperature
range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Symbol
V
CES
I
C
Value
600
100
50
200
5
Unit
V
A
G
E
I
CM
t
SC
A
ms
G
C
E
TO−247
CASE 340L
STYLE 4
V
GE
P
D
$20
223
89
−55
to +150
−55
to +150
260
V
W
MARKING DIAGRAM
T
J
T
stg
T
SLD
°C
°C
°C
G50N60FL
AYWWG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTG50N60FLWG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
©
Semiconductor Components Industries, LLC, 2012
November, 2012
−
Rev. 0
1
Publication Order Number:
NGTG50N60FLW/D
NGTG50N60FLWG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−ambient
Symbol
R
qJC
R
qJA
Value
0.56
40
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
*Includes diode reverse recovery loss using NGTB50N60FLWG.
T
J
= 150°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10
W
V
GE
= 0 V/ 15 V*
T
J
= 25°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10
W
V
GE
= 0 V/ 15 V*
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
−
−
−
−
−
−
−
−
−
−
−
−
−
−
116
43
292
78
1.1
0.6
1.7
110
45
300
105
1.4
1.1
2.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
mJ
ns
V
CE
= 480 V, I
C
= 50 A, V
GE
= 15 V
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
−
−
−
−
−
−
7302
220
190
310
60
150
−
−
−
−
−
−
nC
pF
V
GE
=
0 V, I
C
= 500
mA
V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 25 A, T
J
= 150°C
V
GE
= V
CE
, I
C
= 350
mA
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J =
150°C
V
GE
= 20 V , V
CE
= 0 V
V
(BR)CES
V
CEsat
V
GE(th)
I
CES
I
GES
600
1.40
−
4.5
−
−
−
−
1.65
1.85
5.5
−
−
−
−
1.90
−
6.5
0.5
2
200
V
V
V
mA
nA
Test Conditions
Symbol
Min
Typ
Max
Unit
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2
NGTG50N60FLWG
TYPICAL CHARACTERISTICS
250
I
C
, COLLECTOR CURRENT (A)
200
150
100
50
7V
0
0
10 V
300
I
C
, COLLECTOR CURRENT (A)
V
GE
= 17 V to 13 V
11 V
250
200
150
100
50
0
11 V
10 V
9V
8V
7V
0
1
2
3
4
5
6
7
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
8
T
J
= 25°C
T
J
= 150°C
V
GE
= 17 V to 13 V
9V
8V
8
1
2
3
4
5
6
7
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
250
I
C
, COLLECTOR CURRENT (A)
200
150
100
50
0
T
J
=
−55°C
I
C
, COLLECTOR CURRENT (A)
V
GE
= 17 V to 13 V
11 V
200
180
160
140
120
100
80
60
40
20
0
0
4
8
12
V
GE
, GATE−EMITTER VOLTAGE (V)
16
T
J
= 25°C
T
J
= 150°C
10 V
7V
9V
8V
8
0
1
2
3
4
5
6
7
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.00
V
CE
, COLLECTOR−EMITTER
VOLTAGE (V)
2.50
2.00
1.50
1.00
0.50
0.00
−75
I
C
= 100 A
100000
I
C
= 50 A
I
C
= 25 A
I
C
= 5 A
CAPACITANCE (pF)
10000
C
ies
1000
C
oes
C
res
10
100
−25
25
75
125
T
J
, JUNCTION TEMPERATURE (°C)
175
0
10 20
30 40
50 60 70
80 90 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
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3
NGTG50N60FLWG
TYPICAL CHARACTERISTICS
20
V
GE
, GATE−EMITTER VOLTAGE (V)
15
V
CE
= 480 V
10
5
0
0
50
100
150
200 250
Q
G
, GATE CHARGE (nC)
300
350
Figure 7. Typical Gate Charge
1.6
1.4
SWITCHING LOSS (mJ)
1.2
1
0.8
0.6
0.4
0.2
0
0
20
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
R
g
= 10
W
40
60
80
100
120 140
T
J
, JUNCTION TEMPERATURE (°C)
160
E
off
E
on
1000
t
d(off)
SWITCHING TIME (ns)
100
t
d(on)
t
f
t
r
10
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
R
g
= 10
W
0
20
40
60
80
100
120 140
T
J
, JUNCTION TEMPERATURE (°C)
160
1
Figure 8. Switching Loss vs. Temperature
Figure 9. Switching Time vs. Temperature
4.5
4
SWITCHING LOSS (mJ)
3.5
3
2.5
2
1.5
1
0.5
0
8
E
on
SWITCHING TIME (ns)
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
R
g
= 10
W
1000
t
d(off)
t
f
100
t
d(on)
E
off
t
r
10
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
R
g
= 10
W
8
20
32
44
56
68
80
I
C
, COLLECTOR CURRENT (A)
92
104
20
32
44
56
68
80
I
C
, COLLECTOR CURRENT (A)
92
104
1
Figure 10. Switching Loss vs. I
C
Figure 11. Switching Time vs. I
C
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NGTG50N60FLWG
TYPICAL CHARACTERISTICS
7
6
SWITCHING LOSS (mJ)
5
4
3
2
1
0
5
15
25
35
45
55
65
75
85
1
5
E
off
10000
E
on
t
d(off)
SWITCHING TIME (ns)
1000
t
d(on)
t
f
t
r
10
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
T
J
= 150°C
15
25
35
45
55
65
75
85
R
G
, GATE RESISTOR (W)
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
T
J
= 150°C
100
R
G
, GATE RESISTOR (W)
Figure 12. Switching Loss vs. R
G
Figure 13. Switching Time vs. R
G
3
2.4
1.8
E
off
1.2
0.6
0
175
V
GE
= 15 V
I
C
= 50 A
R
g
= 10
W
T
J
= 150°C
1000
t
d(off)
E
on
SWITCHING TIME (ns)
100
t
d(on)
t
f
t
r
SWITCHING LOSS (mJ)
10
V
GE
= 15 V
I
C
= 50 A
R
g
= 10
W
T
J
= 150°C
225
275
325
375
425 475
525
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
575
225
275
325
375 425 475
525
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
575
1
175
Figure 14. Switching Loss vs. V
CE
Figure 15. Switching Time vs. V
CE
1000
I
C
, COLLECTOR CURRENT (A)
100
10
1
0.1
dc operation
50
ms
100
ms
1000
I
C
, COLLECTOR CURRENT (A)
1 ms
100
0.01
1
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
10
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1000
10
1
V
GE
= 15 V, T
C
= 125°C
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
Figure 17. Reverse Bias Safe Operating Area
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