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NSS12500UW3T2G

产品描述LDO Voltage Regulators
产品类别分立半导体    晶体管   
文件大小108KB,共6页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSS12500UW3T2G概述

LDO Voltage Regulators

NSS12500UW3T2G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码DFN
包装说明SMALL OUTLINE, S-XDSO-N3
针数3
制造商包装代码506AU
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
Is SamacsysN
外壳连接COLLECTOR
最大集电极电流 (IC)5 A
集电极-发射极最大电压12 V
配置SINGLE
最小直流电流增益 (hFE)180
JESD-30 代码S-XDSO-N3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子面层Tin (Sn)
端子形式NO LEAD
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz
最大关闭时间(toff)525 ns
最大开启时间(吨)250 ns
Base Number Matches1

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NSS12500UW3T2G
12 V, 8.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Continuous
Collector Current
Peak
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
ESD
Max
−12
−12
−7.0
−5.0
−8.0
Unit
Vdc
Vdc
Vdc
Adc
A
2
1
3
http://onsemi.com
12 VOLTS
8.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
55 mW
COLLECTOR
3
1
BASE
2
EMITTER
WDFN3
CASE 506AU
MARKING DIAGRAM
VE M
G
1
VE = Specific Device Code
M = Date Code
G
= Pb−Free Package
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #3
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
R
qJA
(Note 1)
P
D
(Note 2)
R
qJA
(Note 2)
R
qJL
(Note 2)
P
Dsingle
(Notes 2 & 3)
T
J
, T
stg
Max
875
7.0
143
1.5
11.8
85
23
3.0
−55
to
+150
Unit
mW
mW/°C
°C/W
W
mW/°C
°C/W
°C/W
W
°C
ORDERING INFORMATION
Device
NSS12500UW3T2G
Package
WDFN3
(Pb−Free)
Shipping
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2
, 1 oz copper traces.
2. FR−4 @ 500 mm
2
, 1 oz copper traces.
3. Thermal response.
©
Semiconductor Components Industries, LLC, 2007
March, 2007
Rev. 1
1
Publication Order Number:
NSS12500UW3/D

 
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