PD - 96164A
IRLML2803GPbF
l
l
l
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
Halogen-Free
HEXFET
®
Power MOSFET
G 1
3 D
S
2
V
DSS
= 30V
R
DS(on)
= 0.25Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint.This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The
low profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Micro3™
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
E
AS
dv/dt
T
J ,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
1.2
0.93
7.3
540
4.3
±20
3.9
5.0
-55 to + 150
Units
A
mW
mW/°C
V
mJ
V/ns
°C
c
d
g
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
f
Typ.
–––
Max.
230
Units
°C/W
www.irf.com
1
12/13/11
IRLML2803GPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
30
1.0
0.87
Typ.
0.029
3.3
0.48
1.1
3.9
4.0
9.0
1.7
85
34
15
Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
0.25
V
GS
= 10V, I
D
= 0.91A
Ω
0.40
V
GS
= 4.5V, I
D
= 0.46A
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 10V, I
D
= 0.46A
1.0
V
DS
= 24V, V
GS
= 0V
µA
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
5.0
I
D
= 0.91A
0.72
nC V
DS
= 24V
1.7
V
GS
= 10V, See Fig. 6 and 9
V
DD
= 15V
I
D
= 0.91A
ns
R
G
= 6.2Ω
R
D
= 16Ω, See Fig. 10
V
GS
= 0V
pF
V
DS
= 25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
26
22
0.54
7.3
1.2
40
32
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 0.91A, V
GS
= 0V
T
J
= 25°C, I
F
= 0.91A
di/dt = 100A/µs
D
G
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
5sec.
Limited by T
Jmax
, starting T
J
= 25°C, L = 9.4mH, R
G
= 25Ω, I
AS
= 0.9A.
I
SD
≤
0.91A, di/dt
≤
120A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
www.irf.com
2
IRLML2803GPbF
10
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
10
I D , Drain-to-Source Current (A)
1
I D, Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
1
3.0V
3.0V
20μs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
0.1
0.1
0.1
1
20μs PULSE WIDTH
T
J
= 150°C
A
10
V DS , Drain-to-Source Voltage (V)
V DS Drain-to-Source Voltage (V)
,
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.0
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 0.91A
1.5
1
1.0
0.5
0.1
3.0
V
DS
= 10V
20μs PULSE WIDTH
3.5
4.0
4.5
5.0
5.5
6.0
6.5
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRLML2803GPbF
160
140
120
100
80
60
40
20
0
1
10
100
C, Capacitance (pF)
C
iss
C
oss
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 0.91A
V
DS
= 24V
V
DS
= 15V
16
12
8
C
rss
4
A
0
0.0
FOR TEST CIRCUIT
SEE FIGURE 9
1.0
2.0
3.0
4.0
5.0
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150°C
I
D
, Drain Current (A)
10
10μs
1
T
J
= 25°C
100μs
1
1ms
0.1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
0.1
1
T
A
= 25°C
T
J
= 150°C
Single Pulse
10
10ms
100
1.4
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
4
IRLML2803GPbF
Q
G
V
DS
V
GS
R
G
10V
R
D
10V
V
G
Q
GS
Q
GD
D.U.T.
+
-
V
DD
Charge
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 9a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
Fig 10a.
Switching Time Test Circuit
V
DS
50KΩ
12V
.2μF
.3μF
90%
+
V
-
DS
D.U.T.
V
GS
3mA
10%
V
GS
t
d(on)
I
G
I
D
t
r
t
d(off)
t
f
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
1000
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
1
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
