参数名称 | 属性值 |
产品种类 Product Category | MOSFET |
制造商 Manufacturer | Infineon(英飞凌) |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | TO-252-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 50 A |
Rds On - Drain-Source Resistance | 6.4 mOhms |
Vgs - Gate-Source Voltage | 20 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 175 C |
系列 Packaging | Reel |
Channel Mode | Enhancement |
Configuration | Single |
Fall Time | 24 ns |
高度 Height | 2.3 mm |
长度 Length | 6.5 mm |
Pd-功率耗散 Pd - Power Dissipation | 136 W |
Rise Time | 19 ns |
工厂包装数量 Factory Pack Quantity | 2500 |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 8 ns |
宽度 Width | 6.22 mm |
单位重量 Unit Weight | 0.139332 oz |
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