CPV362M4UPbF
www.vishay.com
Vishay Semiconductors
IGBT SIP Module
(Fast IGBT)
FEATURES
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all “tail” losses
• HEXFRED
®
soft ultrafast diodes
• Optimized for high speed, see fig. 1 for current vs.
frequency curve
IMS-2
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
V
CES
I
RMS
per phase (3.1 kW total)
with T
C
= 90 °C
T
J
Supply voltage
Power factor
Modulation depth (see fig. 1)
V
CE(on)
(typical)
at I
C
= 3.9 A, 25 °C
Speed
Package
Circuit
600 V
4.6 A
RMS
125 °C
360 V
DC
0.8
115 %
1.7 V
8 kHz to 30 kHz
SIP
Three phase inverter
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current, each IGBT
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
Isolation voltage
Maximum power dissipation, each IGBT
Operating junction and storage temperature range
Soldering temperature
Mounting torque
SYMBOL
V
CES
I
C
I
CM (1)
I
LM (2)
I
F
I
FM
V
GE
V
ISOL
P
D
T
J
, T
Stg
10 s, (0.063" (1.6 mm) from case)
6-32 or M3 screw
1 minute, any terminal to case
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 100 °C
TEST CONDITIONS
MAX.
600
7.2
3.9
22
3.4
22
± 20
2500
23
W
9.1
-40 to +150
°C
300
5 to 7
(0.55 to 0.8)
lbf · in
(N · m)
V
V
RMS
A
UNITS
V
Notes
(1)
Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
V
CC
= 80 % (V
GES
), V
GE
= 20 V, L = 10 μH, R
G
= 50
(see fig.19)
Revision: 10-Jun-15
Document Number: 94483
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV362M4UPbF
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, each IGBT, one IGBT in conduction
Junction to case, each DIODE, one DIODE on conduction
Case to sink, flat, greased surface
Weight of module
0.7
oz.
SYMBOL
R
thJC
(IGBT)
R
thJC
(DIODE)
R
thCS
(MODULE)
TYP.
-
-
0.1
20
MAX.
5.5
9.0
-
g
°C/W
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Temperature coefficient of
breakdown voltage
SYMBOL
V
(VB)CES (1)
V
(BR)CES
/T
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 1 mA
I
C
= 3.9 A
Collector to emitter saturation voltage
V
CE(on)
I
C
= 7.2 A
I
C
= 3.9 A, T
J
= 150 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
Forward transconductance
Zero gate voltage collector current
V
GE(th)
V
GE(th)
/T
J
g
fe (2)
I
CES
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= 100 V, I
C
= 6.5 A
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
I
C
= 8.0 A
I
C
= 8.0 A, T
J
= 150 °C
V
GE
= ± 20 V
See fig. 13
-
-
1.3
-
1.6
± 100
nA
V
GE
= 15 V
See fig. 2, 5
MIN.
600
-
-
-
-
3.0
-
1.4
-
-
-
TYP.
-
0.63
1.70
1.95
1.70
-
-11
4.3
-
-
1.4
MAX.
-
-
2.2
-
V
-
6.0
-
-
250
μA
2500
1.7
V
mV/°C
S
UNITS
V
V/°C
Diode forward voltage drop
Gate to emittler leakage current
Notes
(1)
Pulse width
80 μs; duty factor
0.1 %
(2)
Pulse width 5.0 μs, single shot
V
FM
I
GES
Revision: 10-Jun-15
Document Number: 94483
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV362M4UPbF
www.vishay.com
Vishay Semiconductors
SYMBOL
O
g
O
GE
O
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
C
ies
C
oes
C
res
t
rr
V
GE
= 0 V
V
CC
= 30 V
=
1.0 MHz
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
See fig. 17
-
210
-
See fig. 16
See fig. 15
I
F
= 8.0 A
V
R
= 200 V
dI/dt = 200
A/μs
T
J
= 150 °C
I
C
= 3.9 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
T
J
= 25 °C
I
C
= 3.9 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 50
Energy losses include “tail” and diode
reverse recovery
See fig. 9, 10, 11, 18
I
C
= 3.9 A
V
CC
= 400 V
V
GE
= 15 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
See fig. 7
-
-
-
See fig. 14
-
-
-
-
-
-
55
3.5
4.5
65
124
240
90
5.0
A
8.0
138
nC
360
-
A/μs
TYP.
31
5.0
13
45
22
100
120
0.13
0.07
0.20
42
22
120
250
0.35
530
39
7.4
37
MAX.
47
7.5
20
-
-
ns
160
180
-
-
0.3
-
-
ns
-
-
-
-
-
-
55
ns
pF
mJ
mJ
nC
UNITS
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse recovery current
I
rr
Diode reverse recovery charge
Diode peak rate of fall of
recovery during t
b
Q
rr
dI
(rec)M
/dt
Revision: 10-Jun-15
Document Number: 94483
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
CPV362M4UPbF
www.vishay.com
8
7
Vishay Semiconductors
2.34
LOAD CURRENT (A)
6
5
4
3
2
1
0
0.1
1.76
1.46
1.17
0.88
0.59
0.29
0.00
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
100
8
I
C
, Collector-to-Emitter Current (A)
Maximum DC Collector Current(A)
6
10
5
T
J
= 150°C
T
J
= 25°C
1
3
2
0.1
0 .1
1
V
GE
= 15V
20μs PULSE WIDTH
A
10
0
25
50
75
100
125
150
V
CE
, Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
T
C
, Case Temperature (
°
C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
3.0
100
I
C
, Collector-to-Emitter Current (A)
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 7.8A
10
T
J
= 150°C
2.0
T
J
= 25°C
1
I
C
= 3.9A
I
C
=1.95A
0.1
4
6
V
CC
= 10V
5μs PULSE WIDTH
A
8
10
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Revision: 10-Jun-15
Document Number: 94483
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Total Output Power (kW)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
2.05
CPV362M4UPbF
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10
Vishay Semiconductors
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
P
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
t
1
t
/ t2
2
1
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
1000
C
ies
600
Total Switching Losses (mJ)
A
1 00
C, Capacitance (pF)
800
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
0.20
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.19
I
C
= 3.9A
0.18
C
oes
400
0.17
200
C
res
0.16
0
1
10
0.15
0
V
CE
, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector to Emitter Voltage
20
R
G
, Gate Resistance
(Ω)
10
20
30
40
50
Fig. 9 - Typical Switching Losses vs. Gate Resistance
V
GE
, Gate-to-Emitter Voltage (V)
V
CC
= 400V
I
C
= 3.9A
1
R
G
= 50
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
7.8
A
12
Total Switching Losses (mJ)
16
I
C
=
3.9
A
8
I
C
=
1.95
A
4
0
0
10
20
30
40
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Q
G
, Total Gate Charge (nC)
T
J
, Junction Temperature (
°
C )
Fig. 8 - Typical Gate Charge vs.
Gate to Emitter Voltage
Fig. 10 - Typical Switching Losses vs. Junction Temperature
Revision: 10-Jun-15
Document Number: 94483
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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