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74HC1G125; 74HCT1G125
Bus buffer/line driver; 3-state
Rev. 05 — 23 December 2005
Product data sheet
1. General description
The 74HC1G125; 74HCT1G125 is a high-speed, Si-gate CMOS device.
The 74HC1G125; 74HCT1G125 provides one non-inverting buffer/line driver with 3-state
output. The 3-state output is controlled by the output enable input (pin OE). A HIGH level
at pin OE causes the output to assume a high-impedance OFF-state.
The bus driver output currents are equal compared to the 74HC125 and 74HCT125.
2. Features
s
s
s
s
s
s
Wide supply voltage range from 2.0 V to 6.0 V
Symmetrical output impedance
High noise immunity
Low power consumption
Balanced propagation delays
ESD protection:
x
HBM EIA/JESD22-A114-C exceeds 2000 V
x
MM EIA/JESD22-A115-A exceeds 200 V
s
Very small 5 pins packages
s
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
3. Quick reference data
Table 1:
Quick reference data
GND = 0 V; T
amb
= 25
°
C; t
r
= t
f
≤
6.0 ns.
Symbol
t
PHL
,
t
PLH
C
i
C
PD
Parameter
Conditions
Min
-
-
V
I
= GND to V
CC
[1]
Typ
9
1.5
30
Max
-
-
-
Unit
ns
pF
pF
74HC1G125
propagation delay A to Y V
CC
= 5 V; C
L
= 15 pF
input capacitance
power dissipation
capacitance
-
Philips Semiconductors
74HC1G125; 74HCT1G125
Bus buffer/line driver; 3-state
Table 1:
Quick reference data
…continued
GND = 0 V; T
amb
= 25
°
C; t
r
= t
f
≤
6.0 ns.
Symbol
t
PHL
,
t
PLH
C
i
C
PD
Parameter
Conditions
Min
-
-
V
I
= GND to V
CC
−
1.5 V
[1]
Typ
10
1.5
27
Max
-
-
-
Unit
ns
pF
pF
74HCT1G125
propagation delay A to Y V
CC
= 5 V; C
L
= 15 pF
input capacitance
power dissipation
capacitance
-
[1]
C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
×
N +
Σ(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
Σ(C
L
×
V
CC2
×
f
o
) = sum of the outputs.
4. Ordering information
Table 2:
Ordering information
Package
Temperature range Name
74HC1G125
74HC1G125GW
74HC1G125GV
74HCT1G125
74HCT1G125GW
74HCT1G125GV
−40 °C
to +125
°C
−40 °C
to +125
°C
TSSOP5
SC-74A
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic surface mounted package; 5 leads
SOT353-1
SOT753
−40 °C
to +125
°C
−40 °C
to +125
°C
TSSOP5
SC-74A
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic surface mounted package; 5 leads
SOT353-1
SOT753
Description
Version
Type number
5. Marking
Table 3:
Marking
Marking code
HM
H25
TM
T25
Type number
74HC1G125GW
74HC1G125GV
74HCT1G125GW
74HCT1G125GV
74HC_HCT1G125_5
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 23 December 2005
2 of 16
Philips Semiconductors
74HC1G125; 74HCT1G125
Bus buffer/line driver; 3-state
6. Functional diagram
2
A
Y
4
2
4
1
EN
mna119
1
OE
mna118
Fig 1. Logic symbol
Fig 2. IEC logic symbol
A
Y
OE
mna120
Fig 3. Logic diagram
7. Pinning information
7.1 Pinning
74HC1G125GW
74HCT1G125GW
OE
A
1
2
5
V
CC
OE
74HC1G125GV
74HCT1G125GV
1
5
V
CC
A
2
GND
3
001aad948
4
Y
GND
3
001aad949
4
Y
Fig 4. Pin configuration TSSOP5
Fig 5. Pin configuration SC-74A
7.2 Pin description
Table 4:
Symbol
OE
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
output enable input (active LOW)
data input
ground (0 V)
data output
supply voltage
74HC_HCT1G125_5
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 23 December 2005
3 of 16
Philips Semiconductors
74HC1G125; 74HCT1G125
Bus buffer/line driver; 3-state
8. Functional description
8.1 Function table
Table 5:
Control
OE
L
L
H
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
Function table
[1]
Input
A
L
H
X
Output
Y
L
H
Z
9. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol Parameter
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
[1]
[1]
Min
−0.5
-
-
-
-
-
−65
Max
+7.0
±20
±20
±35
70
−70
+150
200
Unit
V
mA
mA
mA
mA
mA
°C
mW
supply voltage
input clamping current
output clamping current V
O
<
−0.5
V or
V
O
> V
CC
+ 0.5 V
output current
quiescent supply
current
ground current
storage temperature
total power dissipation
T
amb
=
−40 °C
to +125
°C
[2]
V
O
=
−0.5
V to (V
CC
+ 0.5 V)
[1]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
°C
the value of P
tot
derates linearly with 2.5 mW/K.
74HC_HCT1G125_5
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 23 December 2005
4 of 16
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