SMD Efficient Fast Recovery Rectifiers
CEFA201-G Thru. CEFA203-G
Reverse Voltage: 50 to 200 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Super fast recovery time for high efficient.
-Built-in strain relief.
-Low forward voltage drop.
0.209(5.31)
0.185(4.70)
0.067(1.70)
0.051(1.29)
0.180(4.57)
0.160(4.06)
DO-214AC (SMA)
0.110(2.79)
0.086(2.18)
Mechanical data
-Case: JEDEC DO-214AC, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
0.091(2.31)
0.067(1.70)
0.059(1.50)
0.035(0.89)
0.012(0.31)
0.006(0.15)
0.008(0.20)
0.004(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward voltage at
2.0A
Reverse recovery time
Max. DC reverse current at T
A
=25
rated DC blocking voltage T
A
=100
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
Symbol
V
RRM
V
DC
V
RMS
CEFA201-G
50
50
35
CEFA202-G
100
100
70
CEFA203-G
200
200
140
Units
V
V
V
I
FSM
50
A
I
O
V
F
T
rr
C
C
I
R
R
θJL
T
J
T
STG
2.0
0.92
25
5.0
100
55
150
-55 to +150
O
A
V
nS
μA
C/W
O
O
C
C
O
2
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper pad area.
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Comchip Technology CO., LTD.
SMD Efficient Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CEFA201-G thru CEFA203-G)
Fig.1 Reverse Characteristics
100
10
Fig.2 Forward Characteristics
Rever s e C urr e n t (μA )
10
T
J
=125 C
O
1
1
F o r w a rd C u rren t
(A)
T
J
=75
O
C
0.1
T
J
=25
O
C
0.1
0.01
T
J
=25 C
Pulse width 300μS
4% duty cycle
O
0.01
0
20
40
60
80
100
120
140
0.001
0
0.4
0.8
1.2
1.6
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Current Derating Curve
2.8
Fig.4 Non-repetitive Forward Surge Current
50
A v e ra ge d F o r ward C u rr e n t(A )
2.4
2.0
1.6
1.2
0.8
0.4
0
0
25
50
75
100
125
O
Peak F or ward Surge C ur re nt A )
(
T
J
=25 C
8.3ms single half sine
wave, JEDEC method
O
40
30
20
Single phase
Half wave 60Hz
10
0
150
175
1
10
100
Ambient Temperature (
C)
Number of Cycles at 60Hz
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
trr
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
(+)
OSCILLLISCOPE
(NOTE 1)
0
-0.25A
1Ω
NON-
INDUCTIVE
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
1cm
Set time base for
50 / 10nS / cm
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Comchip Technology CO., LTD.