Freescale Semiconductor
‘
Technical Data
Document Number: MRFE6S8046N
Rev. 0, 5/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier
applications.
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 300 mA, P
out
=
35.5 Watts CW
Frequency
864 MHz
880 MHz
894 MHz
G
ps
(dB)
19.9
20
19.8
h
D
(%)
58.7
58.5
57.7
MRFE6S8046NR1
MRFE6S8046GNR1
864 - 894 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
•
Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output
Power (3 dB Input Overdrive from Rated P
out
), Designed for Enhanced
Ruggedness
•
Typical P
out
@ 1 dB Compression Point
]
47 Watts CW
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 285 mA,
P
out
= 17.8 Watts Avg.
Spectral
Regrowth @
400 kHz
(dBc)
61.2
63.4
63.7
Spectral
Regrowth @
600 kHz
(dBc)
70.9
72.5
73
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRFE6S8046NR1
Frequency
864 MHz
880 MHz
894 MHz
G
ps
(dB)
19.8
19.9
19.8
h
D
(%)
43.8
43.6
43.1
EVM
(% rms)
2.1
2
2
CASE 1487 - 05, STYLE 1
TO - 270 WB - 4 GULL
PLASTIC
MRFE6S8046GNR1
PARTS ARE SINGLE - ENDED
Features
•
Class F Output Matched for Higher Impedances and Greater Efficiency
•
Designed for High Efficiency. Typical Drain Efficiency @ P1dB
]
66%
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
RF
in
/V
GS
3
2 RF
out
/V
DS
RF
in
/V
GS
4
1 RF
out
/V
DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +66
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2009. All rights reserved.
MRFE6S8046NR1 MRFE6S8046GNR1
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 35.5 W CW, 28 Vdc, I
DQ
= 300 mA
Case Temperature 82°C, 18 W CW, 28 Vdc, I
DQ
= 285 mA
Symbol
R
θJC
Value
(1,2)
1.7
1.9
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 300 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Characteristic
Power Gain
Drain Efficiency
Input Return Loss
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2.3
3
0.3
3
4
0.4
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(3,4)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, P
out
= 35.5 W CW, I
DQ
= 300 mA, f = 894 MHz
Symbol
G
ps
η
D
IRL
Min
17.5
54
—
Typ
19.8
57.7
- 17
Max
21.5
—
-7
Unit
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRFE6S8046NR1 MRFE6S8046GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 300 mA, P
out
= 35.5 W CW
Frequency
864 MHz
880 MHz
894 MHz
Characteristic
P
out
@ 1 dB Compression Point
IMD Symmetry @ 41 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 35.5 W CW
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Symbol
P1dB
IMD
sym
G
ps
(dB)
19.9
20
19.8
Min
—
—
h
D
(%)
58.7
58.5
57.7
Typ
47
22
Max
—
—
IRL
(dB)
- 12
- 17
- 17
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 300 mA, 864 - 894 MHz Bandwidth
VBW
res
G
F
ΔG
ΔP1dB
—
—
—
—
25
0.2
0.017
0.004
—
—
—
—
MHz
dB
dB/°C
dBm/°C
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 285 mA, P
out
= 17.8 W
Avg., 864 - 894 MHz EDGE Modulation
Spectral
Regrowth @
400 kHz
(dBc)
61.2
63.4
63.7
Spectral
Regrowth @
600 kHz
(dBc)
70.9
72.5
73
Frequency
864 MHz
880 MHz
894 MHz
G
ps
(dB)
19.8
19.9
19.8
h
D
(%)
43.8
43.6
43.1
EVM
(% rms)
2.1
2
2
MRFE6S8046NR1 MRFE6S8046GNR1
RF Device Data
Freescale Semiconductor
3
R1
V
BIAS
Z7
+
C10
C5
Z9
Z6
C14
V
SUPPLY
RF
INPUT
Z10
Z1
C1
C2
Z2
Z3
C4 Z4
Z5
Z11
C6 Z12
C8 Z13
Z14
C13
Z15
RF
OUTPUT
Z8
C3
DUT
C11
C7
C9
C12
Z1
Z2
Z3
Z4
Z5
Z6*
Z7
Z8* Z9*
1.320″ x 0.044″ Microstrip
0.212″ x 0.044″ Microstrip
0.362″ x 0.044″ Microstrip
0.321″ x 0.450″ Microstrip
0.039″ x 0.450″ Microstrip
0.306″ x 0.040″ Microstrip
0.708″ x 0.051″ Microstrip
0.738″ x 0.040″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.040″ x 0.450″ Microstrip
0.321″ x 0.450″ Microstrip
0.080″ x 0.280″ Microstrip
0.263″ x 0.044″ Microstrip
0.233″ x 0.044″ Microstrip
1.332″ x 0.044″ Microstrip
Rogers R04350, 0.020″,
ε
r
= 3.50
* Line length includes microstrip bends
Figure 2. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Schematic
Table 6. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Component Designations and Values
Part
C1, C13
C2
C3, C4
C5
C6, C7
C8, C9
C10, C11
C12
C14
R1
Description
56 pF Chip Capacitors
3.9 pf Chip Capacitor
8.2 pF Chip Capacitors
0.01
μF
Chip Capacitor
1.5 pF Chip Capacitors
1.2 pF Chip Capacitors
39 pF Chip Capacitors
6.8 pF Chip Capacitor
470
μF
63V Electrolytic Capacitor
4.7 KΩ, 1/4 W Chip Resistor
Part Number
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ATC600F390BT500XT
ATC600F6R8BT500XT
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CRCW12064K70FKEA
Manufacturer
ATC
ATC
ATC
Kemet
ATC
ATC
ATC
ATC
MultiComp
Vishay
MRFE6S8046NR1 MRFE6S8046GNR1
4
RF Device Data
Freescale Semiconductor
V
GS
C14
C10
C5
R1
V
DS
C1
C2
C3
CUT OUT AREA
C6
C7
C8
C9
C12
C13
C4
C11
V
DS
MRFE6S8046GN/MRFE6S9046GN
Rev. 2
Figure 3. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Component Layout
MRFE6S8046NR1 MRFE6S8046GNR1
RF Device Data
Freescale Semiconductor
5
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