VS-8EWS..SPbF Series
www.vishay.com
Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 8 A
Base
cathode
+
2
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
3
1
1
Anode -
3
- Anode
TO-252AA (D-PAK)
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Diode variation
TO-252AA (D-PAK)
8A
800 V, 1200 V
1.1 V
150 A
150 °C
Single die
DESCRIPTION
The 8EWS..SPbF rectifier high voltage series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
The
high reverse voltage
range available allows design of
input stage primary rectification with
outstanding voltage
surge
capability.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G10 glass fabric-based
epoxy with 4 oz. (140 μm) copper
Aluminum IMS, R
thCA
= 15 °C/W
Aluminum IMS with heatsink,
R
thCA
= 5 °C/W
Note
• T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
SINGLE-PHASE BRIDGE
1.2
2.5
5.5
THREE-PHASE BRIDGE
1.6
2.8
6.5
A
UNITS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
8 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform at T
C
= 116 °C
VALUES
8
800/1200
150
1.10
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
8EWS08SPbF
8EWS12SPbF
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
0.5
1300
I
RRM
AT 150 °C
mA
Revision: 16-Jan-17
Document Number: 94349
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWS..SPbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
8
125
150
78
110
1100
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
8 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
TEST CONDITIONS
VALUES
1.1
20
0.82
0.05
V
R
= Rated V
RRM
mA
0.50
UNITS
V
m
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
0.03
Marking device
Case style TO-252AA (D-PAK)
8EWS12S
oz.
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA (1)
DC operation
TEST CONDITIONS
VALUES
-55 to +150
2.5
°C/W
62
1
g
UNITS
°C
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 16-Jan-17
Document Number: 94349
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWS..SPbF Series
www.vishay.com
Vishay Semiconductors
20
150
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
Maximum Average Forward
Power Loss (W)
8EWS. Series
R
thJC
(DC) = 2.5 °C/W
18
16
14
12
10
8
DC
180°
120°
90°
60°
30°
RMS limit
Ø
30°
60°
90°
120°
8
10
6
4
2
0
Conduction period
8EWS. Series
T
J
= 150 °C
0
2
4
6
8
10
12
14
16
180°
12
0
2
4
6
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
140
8EWS. Series
R
thJC
(DC) = 2.5 °C/W
130
120
At any rated load condition and with
rated V
rrm
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
Peak Half Sine Wave
Forward Current (A)
110
100
90
80
70
60
50
40
30
Ø
Conduction period
30°
60°
90°
120°
0
2
4
6
8
10
180°
12
14
DC
16
18
VS-8EWS08S .. Series
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
160
180°
120°
90°
60°
30°
RMS limit
140
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= T
J
max.
No voltage reapplied
Rated V
rrm
reapplied
Maximum Average Forward
Power Loss (W)
14
12
10
8
6
4
2
0
Peak Half Sine Wave
Forward Current (A)
120
100
80
60
40
Ø
Conduction angle
8EWS. Series
T
J
= 150 °C
0
2
4
6
8
10
VS-8EWS08S .. Series
20
0.01
0.1
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 16-Jan-17
Document Number: 94349
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWS..SPbF Series
www.vishay.com
Vishay Semiconductors
100
Instantaneous Forward Current (A)
T
J
= 25 °C
T
J
= 150 °C
10
8EWS. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 16-Jan-17
Document Number: 94349
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWS..SPbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
8
2
E
3
W
4
S
5
12
6
S
7
TR
8
PbF
9
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (8 = 8 A)
Circuit configuration:
E = single diode
Package:
W = D-PAK
Type of silicon:
S = standard recovery rectifier
Voltage ratings
S = surface mountable
TR = tape and reel
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
08 = 800 V
12 = 1200 V
9
-
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95016
www.vishay.com/doc?95059
www.vishay.com/doc?95033
Revision: 16-Jan-17
Document Number: 94349
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
