d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 73345
S09-0226-Rev. C, 09-Feb-09
www.vishay.com
1
Symbol
R
thJA
R
thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Si4304DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 13 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A
0.63
40
40
21
19
T
C
= 25 °C
7
70
1.1
60
60
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.6
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
4800
830
305
79.5
36
8.5
6.2
1.25
27
100
47
12
14
87
53
8
1.9
41
150
75
29
22
130
80
15
ns
Ω
120
55
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
30
0.0025
0.0029
80
0.0032
0.0037
0.6
30
34
-5
1.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73345
S09-0226-Rev. C, 09-Feb-09
Si4304DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
70
V
GS
= 10 V thru 2 V
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.0
1.2
50
40
30
20
10
0
0.0
0.8
0.6
0.4
T
C
= 125 °C
0.2
25 °C
0.0
0.0
- 55 °C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.005
5000
0.004
Transfer Characteristics
C
iss
C - Capacitance (pF)
4000
V
GS
= 4.5 V
0.003
V
GS
= 10 V
R
DS(on)
-
3000
2000
C
oss
0.002
1000
C
rss
0.001
0
10
20
30
40
50
60
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
8
R
DS(on)
- On-Resistance
V
DS
= 10 V
V
DS
= 15 V
1.8
I
D
= 20 A
Capacitance
1.6
V
GS
= 10 V
1.4
(Normalized)
6
1.2
4
V
DS
= 20 V
V
GS
= 4.5 V
1.0
2
0.8
0
0
17
34
51
68
85
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73345
S09-0226-Rev. C, 09-Feb-09
On-Resistance vs. Junction Temperature
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3
Si4304DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
10
T
J
= 150 °C
I
S
- Source Current (A)
1
0.015
I
D
= 20 A
0.012
0.009
0.1
T
J
= 25 °C
0.01
0.006
T
J
= 125 °C
0.003
T
J
= 25 °C
0.000
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
I
D
= 250
µA
V
GS(th)
(V)
- 0.1
Power (W)
160
120
- 0.4
I
D
= 5 mA
80
- 0.7
40
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
10 s
DC
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73345
S09-0226-Rev. C, 09-Feb-09
Si4304DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
45
40
35
I
D
- Drain Current (A)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Package Limited
T
C
- Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
Power (W)
6
Power (W)
1.2
4
0.8
2
0.4
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
Logic analyzers are widely used tools in digital design verification and debugging. They can verify the proper functioning of digital circuits and help users identify and troubleshoot faults. They ...[详细]
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