www.fairchildsemi.com
LMV321, LMV358, LMV324
General Purpose, Low Voltage, Rail-to-Rail Output Amplifiers
Features at +2.7V
•
•
•
•
•
•
•
•
•
•
80µA supply current per channel
1.2MHz gain bandwidth product
Output voltage range: 0.01V to 2.69V
Input voltage range: -0.25V to +1.5V
1.5V/µs slew rate
LMV321 directly replaces other industry standard LMV321
amplifiers; available in SC70-5 and SOT23-5 packages
LMV358 directly replaces other industry standard LMV358
amplifiers; available in MSOP-8 and SOIC-8 packages
LMV324 directly replaces other industry standard LMV324
amplifiers; available in SOIC-14 package
Fully specified at +2.7V and +5V supplies
Operating temperature range: -40°C to +125°C
Description
The LMV321 (single), LMV358 (dual), and LMV324 (quad)
are a low cost, voltage feedback amplifiers that consume only
80µA of supply current per amplifier. The LMV3XX family
is designed to operate from 2.7V (±1.35V) to 5.5V (±2.75V)
supplies. The common mode voltage range extends below the
negative rail and the output provides rail-to-rail performance.
The LMV3XX family is designed on a CMOS process and
provides 1.2MHz of bandwidth and 1.5V/µs of slew rate at a
low supply voltage of 2.7V. The combination of low power,
rail-to-rail performance, low voltage operation, and tiny pack-
age options make the LMV3XX family well suited for use in
personal electronics equipment such as cellular handsets,
pagers, PDAs, and other battery powered applications.
Frequency Response vs. C
L
C
L
= 200pF
R
s
= 0
C
L
= 200pF
R
s
= 225Ω
C
L
= 100pF
R
s
= 0
C
L
= 20pF
R
s
= 0
C
L
= 10pF
R
s
= 0
C
L
= 2pF
R
s
= 0
C
L
2kΩ
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Low cost general purpose applications
Cellular phones
Personal data assistants
A/D buffer
DSP interface
Smart card readers
Portable test instruments
Keyless entry
Infrared receivers for remote controls
Telephone systems
Audio applications
Digital still cameras
Hard disk drives
MP3 players
Magnitude (1dB/div)
C
L
= 50pF
R
s
= 0
+
-
10kΩ
10kΩ
R
s
0.01
0.1
1
10
Frequency (MHz)
Typical Application
+V
s
6.8µF
+
+In
+
-
R
g
0.01µF
Out
R
f
LMV3XX
REV. 1D. Feb. 2012
DATA SHEET
LMV321/LMV358/LMV324
Pin Assignments
LMV321
SOT23-5
SC70-5
+In
-V
s
-In
1
+
5
+V
s
+In
-V
s
1
+
5
+V
s
2
3
–
2
3
–
4
Out
-In
4
Out
LMV358
SOIC-8
MSOP-8
Out1
-In1
+In1
-V
s
1
2
3
4
-
+
8
7
-
+
+V
s
Out2
-In2
+In2
Out1
-In1
+In1
-V
s
1
2
3
4
-
+
8
7
-
+
+V
s
Out2
-In2
+In2
6
5
6
5
LMV324
TSSOP-14
SOIC-14
Out1
-In1
+In1
+V
s
+In2
-In2
Out2
1
2
3
4
+
+
-
+
-
+
14 Out4
13 -In4
12 +In4
11 -V
s
10 +In3
9
8
-In3
Out3
Out1
-In1
+In1
+V
s
+In2
-In2
Out2
1
2
3
4
+
+
-
+
-
+
14 Out4
13 -In4
12 +In4
11 -V
s
10 +In3
9
8
-In3
Out3
5
6
7
5
6
7
2
-
-
-
-
REV. 1A April 2004
LMV321/LMV358/LMV324
DATA SHEET
Absolute Maximum Ratings
Parameter
Supply Voltages
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature, 10 seconds
Input Voltage Range
Min.
0
–
-65
–
-Vs -0.5
Max.
+6
+175
+150
+260
+Vs +0.5
Unit
V
°C
°C
°C
V
Recommended Operating Conditions
Parameter
Operating Temperature Range
Power Supply Operating Range
Min.
-40
2.5
Max.
+125
5.5
Unit
°C
V
Electrical Specifications
(T
c
= 25°C, V
s
= +2.7V, G = 2, R
L
= 10kΩ to V
s
/2, R
f
= 10kΩ, V
o (DC)
= V
cc
/2; unless otherwise noted)
Parameter
AC Performance
Gain Bandwidth Product
Phase Margin
Gain Margin
Slew Rate
Input Voltage Noise
Crosstalk: LMV358
LMV324
DC Performance
Input Offset Voltage
1
Average Drift
Input Bias Current
2
Input Offset Current
2
Power Supply Rejection Ratio
1
Supply Current (Per Channel)
1
Input Characteristics
Input Common Mode Voltage Range
1
Common Mode Rejection Ratio
1
Output Characteristics
Output Voltage Swing
Conditions
C
L
= 50pF, R
L
= 2kΩ to V
s
/2
Min.
Typ.
1.2
52
17
1.5
36
91
80
1.7
8
<1
<1
65
80
-0.25
1.5
70
0.01
2.69
7
Max.
Unit
MHz
deg
dB
V/µs
nV/√Hz
dB
dB
mV
µV/°C
nA
nA
dB
µA
V
V
dB
V
V
V
o
= 1V
pp
>50kHz
100kHz
100kHz
DC
50
120
LO
HI
0
50
1.3
R
L
= 10kΩ to V
s
/2; LO
1
R
L
= 10kΩ to V
s
/2; HI
1
0.1
2.6
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Notes:
1. Guaranteed by testing or statistical analysis at +25°C.
2. +IN and -IN are gates to CMOS transistors with typical input bias current of <1nA. CMOS leakage is too small to practically measure.
REV. 1D. Feb. 2012
3
DATA SHEET
LMV321/LMV358/LMV324
Electrical Specifications
(T
c
= 25°C, V
s
= +5V, G = 2, R
L
= 10kΩ to V
s
/2, R
f
= 10kΩ, V
o (DC)
= V
cc
/2; unless otherwise noted)
Parameter
AC Performance
Gain Bandwidth Product
Phase Margin
Gain Margin
Slew Rate
Input Voltage Noise
Crosstalk: LMV358
LMV324
DC Performance
Input Offset Voltage
1
Average Drift
Input Bias Current
2
Input Offset Current
2
Power Supply Rejection Ratio
1
Open Loop Gain
1
Supply Current (Per Channel)
1
Input Characteristics
Input Common Mode Voltage Range
1
Common Mode Rejection
Output Characteristics
Output Voltage Swing
Ratio
1
R
L
= 2kΩ to V
s
/2; LO/HI
R
L
= 10kΩ to V
s
/2; LO
1
R
L
= 10kΩ to V
s
/2; HI
1
sourcing; V
o
= 0V
sinking; V
o
= 5V
Conditions
C
L
= 50pF, R
L
= 2kΩ to V
s
/2
Min.
Typ.
1.4
73
12
1.5
33
91
80
1
6
<1
<1
65
70
100
-0.4
3.8
75
0.036 to 4.95
0.013
4.98
+34
-23
7
Max.
Unit
MHz
deg
dB
V/µs
nV/√Hz
dB
dB
mV
µV/°C
nA
nA
dB
dB
µA
V
V
dB
V
V
V
mA
mA
>50kHz
100kHz
100kHz
DC
50
50
150
LO
HI
0
50
3.6
0.1
5
10
4.9
Short Circuit Output Current
1
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Notes:
1. Guaranteed by testing or statistical analysis at +25°C.
2. +IN and -IN are gates to CMOS transistors with typical input bias current of <1nA. CMOS leakage is too small to practically measure.
Package Thermal Resistance
Package
5 lead SC70
5 lead SOT23
8 lead SOIC
8 lead MSOP
14 lead SOIC
θ
JA
331.4°C/W
256°C/W
152°C/W
206°C/W
88°C/W
4
REV. 1D. Feb. 2012
LMV321/LMV358/LMV324
DATA SHEET
Typical Operating Characteristics
(T
c
= 25°C, V
s
= +5V, G = 2, R
L
= 10kΩ to V
s
/2, R
f
= 10kΩ, V
o (DC)
= V
cc
/2; unless otherwise noted)
Non-Inverting Freq. Response V
s
= +5V
Normalized Magnitude (1dB/div)
G=2
G=1
Inverting Frequency Response V
s
= +5V
Normalized Magnitude (1dB/div)
G = -2
G = -1
G = 10
G = -10
G = -5
G=5
0.01
0.1
1
10
0.01
0.1
1
10
Frequency (MHz)
Non-Inverting Freq. Response V
s
= +2.7V
Normalized Magnitude (1dB/div)
G=1
G=2
Frequency (MHz)
Inverting Freq. Response V
s
= +2.7V
Normalized Magnitude (1dB/div)
G = -1
G = -2
G = -10
G = 10
G=5
G = -5
0.01
0.1
1
10
0.01
0.1
1
10
Frequency (MHz)
Frequency Response vs. C
L
C
L
= 200pF
R
s
= 0
C
L
= 200pF
R
s
= 225Ω
C
L
= 100pF
R
s
= 0
C
L
= 20pF
R
s
= 0
C
L
= 10pF
R
s
= 0
C
L
= 2pF
R
s
= 0
C
L
2kΩ
Frequency (MHz)
Frequency Response vs. R
L
Magnitude (1dB/div)
Magnitude (1dB/div)
C
L
= 50pF
R
s
= 0
R
L
= 1kΩ
R
L
= 100kΩ
R
L
= 10kΩ
+
-
10kΩ
10kΩ
R
s
R
L
= 2kΩ
0.01
0.1
1
10
0.01
0.1
1
10
Frequency (MHz)
Small Signal Pulse Response
0.25
0.2
2.5
2
Frequency (MHz)
Large Signal Pulse Response
Output (V)
Output (V)
0.15
0.1
0.05
0
1.5
0.1
0.5
0
-0.5
-0.05
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
Time (µs)
Time (µs)
REV. 1D. Feb. 2012
5
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