VS-240U(R).. Series
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Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 320 A
FEATURES
• Diffused diode
• Wide current range
• High voltage ratings up to 1200 V
• High surge current capabilities
• Stud cathode and stud anode version
• Hermetic metal case
DO-205AB (DO-9)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Welders
• Power supplies
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
320 A
DO-205AB (DO-9)
Single diode
• Machine tool controls
• High power drives
• Medium traction applications
• Battery charges
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
VALUES
320
T
C
100
500
4500
4700
101
92
600 to 1200
-40 to +180
UNITS
A
°C
A
A
kA
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
60
VS-240U(R)..
80
100
120
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
600
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
700
900
1100
1300
15
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 27-Jun-14
Document Number: 93504
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-240U(R).. Series
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Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 80 °C case temperature
t = 10 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
320
100
500
4500
4700
3800
Sinusoidal half wave,
initial T
J
= T
J
maximum
4000
101
92
72
66
1010
0.6
0.83
1.33
kA
2
s
m
V
kA
2
s
A
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Slope resistance
Threshold voltage
Maximum forward voltage drop
I
2
t
r
f
V
F(T0)
V
FM
t = 0.1 to 10 ms, no voltage reapplied
T
J
= T
J
maximum
I
pk
= 750 A, T
J
= 25 °C, t
p
= 10 ms sinusoidal wave
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowable mounting torque +0 -20 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
-40 to 180
0.18
K/W
0.08
37 (330)
28 (250)
250
N·m
(lbf · in)
g
UNITS
°C
DO-205AB (DO-9
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.019
0.023
0.030
0.045
0.076
RECTANGULAR CONDUCTION
0.015
0.025
0.034
0.047
0.076
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Jun-14
Document Number: 93504
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-240U(R).. Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
180
240U(R)
160
140
Conduction Period
120
100
80
60
0
100
200
300
400
500
600
30 °
60 °
90 °
120 °
180 °
DC
R
thJC
(DC) = 0.18 K/W
Maximum Allowable Case Temperature (°C)
180
170
160
150
140
130
120
110
100
90
80
0
50
100
150
200
250
300
350
30 °
60 °
90 °
120 °
180 °
Conduction Angle
240U(R)
R
thJC
(DC) = 0.18 K/W
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
450
180 °
120 °
90 °
60 °
30 °
RMS Limit
0.5
K
0.7
Maximum Average Forward
Power Loss (W)
400
350
300
250
200
150
Rt
A
h
S
2
K/
W
0.
0.3
=
1
0.
K/
W
K/
W
-D
el
/W
ta
R
Conduction Angle
100
50
0
0
50
100
150
200
250
300
240U(R)..
Tj = 180 °C
K/W
1 K/
W
1.5 K/
W
3 K/W
350 20
40
60
80
100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
600
Maximum Average Forward
Power Loss (W)
500
400
300
200
100
0
0
DC
180 °
120 °
90 °
60 °
30 °
RMS Limit
Conduction Period
240U(R)
Tj = 180 °C
Rt
h
S
A
0.2
K/W
/W
=
0.1
K/
W
0.3
K
-D
elt
aR
0.5
K/W
0.7
K/W
1 K/W
1.5 K/W
3 K/W
100
200
300
400
500
600 20
40
60
80
100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 27-Jun-14
Document Number: 93504
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-240U(R).. Series
www.vishay.com
Vishay Semiconductors
Peak Half
Sine
Wave Forward Current (A)
5000
4500
4000
3500
3000
2500
2000
0.01
Maximum Non Repetitive
Surge
Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 180 °C
No Voltage Reapplied
Rated Vrrm Reapplied
Peak Half
Sine
Wave Forward Current (A)
4000
3800
3600
3400
3200
3000
2800
2600
2400
2200
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following
Surge.
Initial Tj = 180 °C
@ 60 Hz 0.0083
s
@ 50 Hz 0.0100
s
Per Junction
10
100
Per Junction
0.1
1
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
10 000
Tj = 25°C
Tj = 180 °C
1000
100
10
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady State
Value
R
thJC
per junction = 0.18 K/W
DC Operation)
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
t -
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Revision: 27-Jun-14
Document Number: 93504
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-240U(R).. Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
5
6
7
-
-
-
-
-
-
-
24
2
0
3
U
4
R
5
60
6
D
7
Vishay Semiconductors product
24 = essential part number
0 = standard device
U = stud normal polarity (cathode to stud)
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
Diffused diode
Note = For metric device M16 x 1.5 contact factory
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95317
Revision: 27-Jun-14
Document Number: 93504
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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