74VHC132
QUAD 2-INPUT SCHMITT NAND GATE
s
s
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 3.9 ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 2
µA
(MAX.) at T
A
=25°C
TYPICAL HYSTERESIS:
V
h
= 1V at V
CC
= 4.5V
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8 mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 132
IMPROVED LATCH-UP IMMUNITY
LOW NOISE: V
OLP
= 0.8V (MAX.)
SOP
TSSOP
Table 1: Order Codes
PACKAGE
SOP
TSSOP
T&R
74VHC132MTR
74VHC132TTR
DESCRIPTION
The 74VHC132 is an advanced high-speed
CMOS QUAD 2-INPUT SCHMITT NAND GATE
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS technology.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
Pin configuration and function are the same as
those of the 74VHC00 but the 74VHC132 has
hysteresis.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fall input signals.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
Figure 1: Pin Connection And IEC Logic Symbols
November 2004
Rev. 4
1/11
74VHC132
Figure 2: Input Equivalent Circuit
Table 2: Pin Description
PIN N°
1, 4, 9, 12
2, 5, 10, 13
3, 6, 8, 11
7
14
SYMBOL
1A to 4A
1B to 4B
1Y to 4Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
Table 3: Truth Table
A
L
L
H
H
B
L
H
L
H
Y
H
H
H
L
Table 4: Absolute Maximum Ratings
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
±
50
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 5: Recommended Operating Conditions
Symbol
V
CC
V
I
V
O
T
op
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Parameter
Value
2 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
Unit
V
V
V
°C
2/11
74VHC132
Table 6: DC Specifications
Test Condition
Symbol
Parameter
V
CC
(V)
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
2.0
3.0
4.5
3.0
4.5
V
OL
Low Level Output
Voltage
2.0
3.0
4.5
3.0
4.5
I
I
I
CC
Input Leakage
Current
Quiescent Supply
Current
0 to
5.5
5.5
I
O
=-50
µA
I
O
=-50
µA
I
O
=-50
µA
I
O
=-4 mA
I
O
=-8 mA
I
O
=50
µA
I
O
=50
µA
I
O
=50
µA
I
O
=4 mA
I
O
=8 mA
V
I
= 5.5V or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
2.2
3.15
3.85
0.9
1.35
1.65
1.2
1.4
1.6
2.0
3.0
4.5
Typ.
Max.
Value
-40 to 85°C
Min.
2.2
3.15
3.85
0.9
1.35
1.65
1.2
1.4
1.6
Max.
-55 to 125°C
Min.
2.2
3.15
3.85
0.9
1.35
1.65
1.2
1.4
1.6
Max.
V
Unit
V
t+
High Level
Threshold Voltage
Low Level
Threshold Voltage
Hysteresis Voltage
V
t-
V
V
h
0.3
0.4
0.5
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.3
0.4
0.5
1.9
2.9
4.4
2.48
3.8
0.3
0.4
0.5
1.9
2.9
4.4
2.4
3.7
V
V
OH
High Level Output
Voltage
V
0.1
0.1
0.1
0.36
0.36
±
0.1
2
0.1
0.1
0.1
0.44
0.44
±
1
20
0.1
0.1
0.1
0.55
0.55
±
1
20
µA
µA
V
Table 7: AC Electrical Characteristics
(Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
V
CC
(V)
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
(*) Voltage range is 3.3V
±
0.3V
(**) Voltage range is 5.0V
±
0.5V
Value
T
A
= 25°C
Min.
Typ.
5.6
7.6
3.9
5.3
Max.
11.9
15.4
7.7
9.7
-40 to 85°C
Min.
1.0
1.0
1.0
1.0
Max.
14.0
17.5
9.0
11.0
-55 to 125°C
Min.
1.0
1.0
1.0
1.0
Max.
14.0
17.5
9.0
11.0
ns
Unit
C
L
(pF)
15
50
15
50
t
PLH
t
PHL
Propagation Delay
Time
3/11
74VHC132
Table 8: Capacitive Characteristics
Test Condition
Symbol
Parameter
T
A
= 25°C
Min.
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
(note 1)
Typ.
6
16
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/4 (per gate)
Table 9: Dynamic Switching Characteristics
Test Condition
Symbol
Parameter
V
CC
(V)
5.0
T
A
= 25°C
Min.
Typ.
0.3
-0.8
C
L
= 50 pF
3.5
-0.3
Max.
0.8
V
Value
-40 to 85°C
Min.
Max.
-55 to 125°C
Min.
Max.
Unit
V
OLP
V
OLV
V
IHD
V
ILD
Dynamic Low
Voltage Quiet
Output (note 1, 2)
Dynamic High
Voltage Input
(note 1, 3)
Dynamic Low
Voltage Input
(note 1, 3)
5.0
V
5.0
1.5
V
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n-1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V
ILD
), 0V to threshold
(V
IHD
), f=1MHz.
Figure 3: Test Circuit
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R
T
= Z
OUT
of pulse generator (typically 50Ω)
4/11
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