PTFA220081M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
8 W, 700 – 2200 MHz
Description
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for
power amplifiers applications with frequencies from 700 MHz to 2200
MHz. This LDMOS transistor offers excellent gain, efficiency and
linearity performance in a small overmolded plastic package.
PTFA220081M
Package PG-SON-10
V
DD
= 28 V, I
DQ
= 100 mA,
ƒ
1
= 939.5 MHz, ƒ
2
= 940.5 MHz
-10
-20
50
Two-tone Drive-up
Features
•
Typical two-carrier WCDMA performance,
8 dB PAR
- P
OUT
= 33 dBm Avg
- ACPR = –40 dBc
Typical CW performance, 940 MHz, 28 V
- P
OUT
= 40 dBm
- Efficiency = 59%
- Gain = 20 dB
Typical CW performance, 2140 MHz, 28 V
- P
OUT
= 40 dBm
- Efficiency = 50%
- Gain = 15 dB
Capable of handling 10:1 VSWR @ 28 V, 8 W
(CW) output power
Integrated ESD protection
Excellent thermal stability
Pb-free and RoHS compliant
•
Efficiency
40
IMD (dBc)
Efficiency (%)
-30
-40
-50
-60
34
35
36
37
38
IMD 3rd
30
20
•
IMD 5th
10
0
•
•
•
•
39
40
41
Output Power, PEP (dBm)
RF Characteristics
Two-tone Measurements
(not subject to production test – verified by design / characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 100 mA, P
OUT
= 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
17
38
–31
Max
—
—
—
Unit
dB
%
dBc
h
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 17
Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(not subject to production test – verified by design / characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 100 mA, P
OUT
= 8 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Symbol
G
ps
Min
—
—
—
—
Typ
20.7
39
–30
20
Max
—
—
—
—
Unit
dB
%
dBc
dB
h
D
IMD
IRL
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 A
V
DS
= 28 V, I
DQ
= 100 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.0
—
Typ
—
—
1.10
2.5
—
Max
—
1.0
—
3.0
1.0
Unit
V
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 8 W DC )
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
65
–0.5 to +12
175
–65 to +150
4.2
Unit
V
V
°C
°C
°C/W
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Package Temperature
260
Unit
°C
Ordering Information
Type
PTFA220081M V4
Package Outline
PG-SON-10
Package Description
Molded plastic, SMD
Shipping
Tape & Reel, 500 pcs
Data Sheet
2 of 17
Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz
V
DD
= 28 V, I
DQ
= 100 mA,
ƒ =
940 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
21.5
21.0
20.5
20.0
19.5
60
0
Two-carrier WCDMA 3GPP
V
DD
= 28 V, I
DQ
= 100 mA, ƒ = 940 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
55
Two-carrier WCDMA 3GPP Drive-up
Efficiency
Drain Efficiency (%)
IMD & ACPR (dBc)
Gain
50
40
30
20
-10
-20
-30
-40
-50
30
31
32
33
34
35
36
37
38
39
45
IMD Up
IMD Low
Gain (dB)
35
25
ACPR
15
5
Efficiency
19.0
29
30
31
32
33
34
35
36
37
38
39
10
Output Power (dBm)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 100 mA
V
DD
= 28 V, I
DQ
= 150 mA,
ƒ
1
= 939.5 MHz, ƒ
2
= 940.5 MHz
70
22
50
Two-tone Drive-up
20.8
20.4
Gain
60
Drain Efficiency (%)
21
Gain
40
Gain (dB)
Gain (dB)
20.0
19.6
19.2
18.8
34
35
36
37
38
39
40
41
50
20
30
Efficiency
920 MHz
940 MHz
960 MHz
40
30
20
19
20
Efficiency
18
33
34
35
36
37
38
39
40
41
10
Output Power (dBm)
Output Power, PEP (dBm)
Data Sheet
3 of 17
Rev. 05, 2011-04-01
Efficiency (%)
Drain Efficiency (%)
PTFA220081M
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz
(cont.)
V
DD
= 28 V, I
DQ
= 100 mA, Spacing = 100 kHz,
PEP = 8 W
21.0
20.5
-6
Two-tone Gain & Input Return Loss
Power Gain (dB)
20.0
19.5
19.0
18.5
18.0
17.5
17.0
880
900
920
-12
-15
-18
IRL
-21
-24
-27
-30
940
960
980
1000
Frequency (MHz)
Broadband Circuit Impedance
D
Input Return Loss (dB)
Gain
-9
Z
0
= 50
W
Z Source
Z Load
G
S
Frequency
MHz
869
894
920
940
960
1930
1990
2110
2170
Data Sheet
R
Z Source
W
jX
7.20
6.60
5.70
5.10
5.10
–2.10
–1.70
–1.00
–1.00
R
1.54
1.49
1.59
1.61
1.61
1.91
2.11
2.45
2.30
Z Load
W
jX
9.10
8.70
9.10
10.70
9.80
6.20
5.20
5.10
5.60
4 of 17
Rev. 05, 2011-04-01
14.11
14.91
13.83
10.83
13.34
5.59
4.21
4.43
4.25
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 920 – 960 MHz
PORT
3
S5
8
R103
2000 Ohm
TL104
TL105
1
4
3
2
TL108
TL106
R104
10 Ohm
C103
1000 pF
3
In
NC
2
3
Out
NC
6
1
4
7
5
S3
R102
1200 Ohm
R101
1300 Ohm
C102
1000 pF
V
DD
L1
22 nH
TL109
R107
10 Ohm
TL113
RF_IN
S2
R106
510 Ohm
C101
1000 pF
S4
1
2
C
4
B
3
E
C105
68 pF
TL102
TL101
2
3
1
TL114
TL111
2
3
1
TL112
2
3
1
TL103
R105
1.3 Ohm
TL110
3
4
2
1
TL107
a080304m_960 MHz_bdin_06-03-2010
GATE_DUT
C106
5.6 pF
C104
16 pF
C107
16 pF
Reference circuit input schematic for ƒ = 920 – 960 MHz
TL205
TL206
TL225
TL217
2
3
1
TL204
TL218
TL224
2
3
1
C205
4710000 pF
TL213
TL216
C204
10000000 pF
TL223
3
1
2
V
DD
C202
68 pF
TL202
3
2
1
TL203
TL201
2
3
1
TL214
TL215
a080304m_960 MHz_bdout_06-03-2010
3
1
2
TL207
R201
0 Ohm
TL208
TL212
TL211
DRAIN_DUT
TL209
2
3
1
TL210
TL222
TL221
1
3
2
TL219
C203
68 pF
TL220
RF_OUT
C201
3.6 pF
Reference circuit output schematic for ƒ = 920 – 960 MHz
Data Sheet
5 of 17
Rev. 05, 2011-04-01
传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
