Freescale Semiconductor
Technical Data
Document Number: MRF6VP41KH
Rev. 6, 4/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for pulse and CW wideband applications with frequencies up to
500 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
•
Typical Pulse Performance at 450 MHz: V
DD
= 50 Volts, I
DQ
= 150 mA,
P
out
= 1000 Watts Peak (200 W Avg.), Pulse Width = 100
μsec,
Duty Cycle = 20%
Power Gain — 20 dB
Drain Efficiency — 64%
•
Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak
Power
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
•
•
•
•
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
MRF6VP41KHR6
MRF6VP41KHSR6
10-
-500 MHz, 1000 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D-
-05, STYLE 1
NI-
-1230
MRF6VP41KHR6
CASE 375E-
-04, STYLE 1
NI-
-1230S
MRF6VP41KHSR6
PARTS ARE PUSH-
-PULL
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Total Device Dissipation @ T
C
= 25°C, CW only
(3)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
--0.5, +110
--6, +10
-- 65 to +150
150
225
1333
Unit
Vdc
Vdc
°C
°C
°C
W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to Fig. 12, Transient Thermal Impedance, for information to calculate value for pulsed operation.
©
Freescale Semiconductor, Inc., 2008--2010, 2012. All rights reserved.
MRF6VP41KHR6 MRF6VP41KHSR6
1
RF Device Data
Freescale Semiconductor, Inc.
Table 2. Thermal Characteristics
Characteristic
Thermal Impedance, Junction to Case
Pulse:
Case Temperature 80°C, 1000 W Peak, 100
μsec
Pulse Width, 20% Duty Cycle,
450 MHz
(3)
Thermal Resistance, Junction to Case
CW:
Case Temperature 84°C, 1000 W CW, 352.2 MHz
Symbol
Z
θJC
Value
(1,2)
0.03
Unit
°C/W
R
θJC
0.15
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2000 V
A, passes 125 V
IV, passes 2000 V
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(I
D
= 300 mA, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 1600
μAdc)
Gate Quiescent Voltage
(5)
(V
DD
= 50 Vdc, I
D
= 150 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 4 Adc)
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
3.3
147
506
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
1.5
—
1.68
2.2
0.28
3
3.5
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
110
—
—
—
—
—
—
10
—
100
5
μAdc
Vdc
μAdc
mA
Symbol
Min
Typ
Max
Unit
Functional Tests
(5)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W Peak (200 W Avg.), f = 450 MHz,
100
μsec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
19
60
—
20
64
--18
22
—
--9
dB
%
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Refer to Fig. 12, Transient Thermal Impedance, for other pulsed conditions.
4. Each side of device measured separately.
5. Measurement made with device in push--pull configuration.
(continued)
MRF6VP41KHR6 MRF6VP41KHSR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Power Gain
Drain Efficiency
Input Return Loss
Symbol
G
ps
η
D
IRL
Min
—
—
—
Typ
20.1
67
--10.2
Max
—
—
—
Unit
dB
%
dB
Typical Performance — 352.2 MHz
(In Freescale 352.2 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W CW
Typical Performance — 500 MHz
(In Freescale 500 MHz Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 150 mA, P
out
= 1000 W Peak
(200 W Avg.), f = 500 MHz, 100
μsec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
η
D
IRL
—
—
—
19.5
66
--23
—
—
—
dB
%
dB
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
3
V
BIAS
B1
+
C1
C2
C3
C4
L1
Z12
L3
Z14
Z16
Z18
Z20
Z22
C22
C23
C25
C26
C27
C28
+
C29
+
C30
V
SUPPLY
COAX1
COAX3
Z8
Z2
RF
INPUT Z1
Z3
C6
Z9
COAX2
B2
+
C11
Z1
Z2*, Z3*
Z4*, Z5*
Z6, Z7
Z8*, Z9*
Z10, Z11
Z12, Z13
C12
C13
C14
C5
C7
C8
Z5
Z7
C9
DUT
C10
Z11
Z4
Z6
Z10
RF
OUTPUT
Z24
C15
C16
C17
C18
C19
C24
Z13
Z17
Z19
Z21
Z23
C21
Z15
L2
L4
C20
COAX4
V
BIAS
+
C31
C32
C33
C34
C35
+
C36
V
SUPPLY
0.366″ x 0.082″ Microstrip
0.170″ x 0.100″ Microstrip
0.220″ x 0.451″ Microstrip
0.117″ x 0.726″ Microstrip
0.792″ x 0.058″ Microstrip
0.316″ x 0.726″ Microstrip
0.262″ x 0.507″ Microstrip
Z14*, Z15*
Z16, Z17
Z18, Z19
Z20, Z21, Z22, Z23
Z24
PCB
0.764″ x 0.150″ Microstrip
0.290″ x 0.430″ Microstrip
0.100″ x 0.430″ Microstrip
0.080″ x 0.430″ Microstrip
0.257″ x 0.215″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
* Line length includes microstrip bends
Figure 2. MRF6VP41KHR6(HSR6) Pulse Test Circuit Schematic — 450 MHz
Table 5. MRF6VP41KHR6(HSR6) Pulse Test Circuit Component Designations and Values — 450 MHz
Part
B1, B2
C1, C11
C2, C12, C28, C34
C3, C13, C27, C33
C4, C14
C5, C6, C8, C15
C7, C10
C9
C16
C17
C18
C19
C20, C21, C22, C23,
C25, C32
C24
C26, C31
C29, C30, C35, C36
Coax1, 2, 3, 4
L1, L2
L3, L4
Description
47
Ω,
100 MHz Short Ferrite Beads
47
μF,
50 V Electrolytic Capacitors
0.1
μF
Chip Capacitors
220 nF, 50 V Chip Capacitors
2.2
μF,
50 V Chip Capacitors
27 pF Chip Capacitors
0.8--8.0 pF Variable Capacitors
33 pF Chip Capacitor
12 pF Chip Capacitor
10 pF Chip Capacitor
9.1 pF Chip Capacitor
8.2 pF Chip Capacitor
240 pF Chip Capacitors
5.6 pF Chip Capacitor
2.2
μF,
100 V Chip Capacitors
330
μF,
63 V Electrolytic Capacitors
25
Ω
Semi Rigid Coax, 2.2″ Shield Length
2.5 nH, 1 Turn Inductors
43 nH, 10 Turn Inductors
Part Number
2743019447
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ATC100B330JT500XT
ATC100B120JT500XT
ATC100B100JT500XT
ATC100B9R1CT500XT
ATC100B8R2CT500XT
ATC100B241JT200XT
ATC100B5R6CT500XT
2225X7R225KT3AB
EMVY630GTR331MMH0S
UT--141C--25
A01TKLC
B10TJLC
Manufacturer
Fair--Rite
Illinois
Kemet
Kemet
Kemet
ATC
Johanson Components
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Nippon Chemi--Con
Micro--Coax
Coilcraft
Coilcraft
MRF6VP41KHR6 MRF6VP41KHSR6
4
RF Device Data
Freescale Semiconductor, Inc.
C29
C1
B1
C2 C3
C4
C27
MRF6VP41KH
Rev. 1
C25
COAX1
L1
L3
C28
C30
C26
COAX3
C5 C7
C10
C8 C9
C15
C23
C18 C19
C16
CUT OUT AREA
C17
C22
C6
C20
C21 C24
COAX2
L2
C32
L4
COAX4
C31
C35
C11
B2 C12
C14
C33
C36
C13
C34
Figure 3. MRF6VP41KHR6(HSR6) Pulse Test Circuit Component Layout — 450 MHz
MRF6VP41KHR6 MRF6VP41KHSR6
RF Device Data
Freescale Semiconductor, Inc.
5
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