d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
www.vishay.com
1
New Product
SiE878DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain Top)
Steady State
Maximum Junction-to-Case (Source)
a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
a, b
t
≤
10 s
Symbol
R
thJA
R
thJC
(Drain)
R
thJC
(Source)
Typical
20
4
5.5
Maximum
24
5
7
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 20 A
V
GS
= 4.5
V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
Min.
25
Typ.
Max.
Unit
V
25
-5
1
2.2
± 100
1
10
0.0042
0.0055
74
1400
400
145
24
11.2
4.2
3
1.2
15
15
22
12
10
10
20
10
0.0052
0.0068
mV/°C
V
nA
µA
A
Ω
S
25
V
DS
= 12.5 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 12.5 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 12.5 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 12.5 V, R
L
= 1.25
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
0.2
pF
36
17
nC
Ω
V
DD
= 12.5 V, R
L
= 1.25
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
2.4
25
25
35
20
15
15
30
15
20.8
60
1.2
45
36
ns
T
C
= 25 °C
0.8
30
24
14
16
I
SM
Pulse Diode Forward Current
I
S
= 10 A
V
SD
Body Diode Voltage
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
t
a
Reverse Recovery Fall Time
t
b
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
New Product
SiE878DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
120
20
100
I
D
- Drain Current (A)
V
GS
= 10
V
thru 4
V
I
D
- Drain Current (A)
80
16
T
C
= 125 °C
12
T
C
= 25 °C
8
60
V
GS
= 3
V
40
20
4
T
C
= - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.007
2000
C
iss
1600
C - Capacitance(pF)
Transfer Characteristics
V
GS
= 4.5
V
R
DS(on)
- On-Resistance (Ω)
0.006
1200
C
oss
800
0.005
V
GS
= 10
V
0.004
400
C
rss
0.003
0
20
40
60
80
100
0
0
5
10
15
20
25
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 20 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
(Normalized)
V
DS
=12.5V
6
V
DS
= 6.3V
V
DS
= 20
V
4
1.6
1.8
I
D
= 20 A
Capacitance
1.4
1.2
V
GS
= 10
V
1.0
2
0.8
0
0
5
10
15
20
25
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
www.vishay.com
3
New Product
SiE878DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.020
I
D
= 20 A
0.016
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 100 °C
10
T
J
= 25 °C
0.012
T
J
= 125 °C
0.008
0.004
T
J
= 25 °C
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.0
50
On-Resistance vs. Gate-to-Source Voltage
1.8
40
1.6
V
GS(th)
(V)
Power (W)
125
150
I
D
= 250
µA
1.4
30
20
1.2
10
1.0
0.8
- 50
- 25
0
25
50
75
100
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
100
µs
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS
DC
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65456
S09-2034-Rev. A, 05-Oct-09
New Product
SiE878DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
25
50
I
D
- Drain Current (A)
Package Limited
Power (W)
20
40
15
30
10
20
5
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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