Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
Features
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ULTRAFAST RECTIFIERS
2 AMPERES, 50−100 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.74 V Max @ 2.0 A, T
J
= 150C)
AEC−Q101 Qualified and PPAP Capable
SURS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are Pb−Free Packages*
Mechanical Characteristics:
SMB
CASE 403A
MARKING DIAGRAM
Case: Epoxy, Molded
Weight: 95 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
AYWW
U2x
G
G
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3A (> 4 kV)
A
Y
WW
U2x
=
=
=
=
G
Assembly Location
Year
Work Week
Device Code
x= A for MURS205T3G
= B for MURS210T3G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MURS205T3G
SURS8205T3G
MURS210T3G
SURS8210T3G
Package
SMB
(Pb−Free)
SMB
(Pb−Free)
SMB
(Pb−Free)
SMB
(Pb−Free)
Shipping
†
2,500 Tape & Reel
2,500 Tape & Reel
2,500 Tape & Reel
2,500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012
−
Rev. 2
1
Publication Order Number:
MURS205T3/D
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MURA205T3G, SURS8205T3G
MURA210T3G, SURS8210T3G
Average Rectified Forward Current
@ T
L
= 150C
@ T
L
= 125C
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
Symbol
V
RRM
V
RWM
V
R
Value
Unit
V
50
100
1.0
2.0
50
−60
to +175
A
I
F(AV)
I
FSM
T
J
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (T
L
= 25C)
Symbol
R
qJL
Max
13
Unit
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 2.0 A, T
J
= 25C)
(i
F
= 2.0 A, T
J
= 150C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 25C)
(Rated dc Voltage, T
J
= 150C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
(i
F
= 0.5 A, i
R
= 1.0 A, I
R
to 0.25 A)
Maximum Forward Recovery Time
(i
F
= 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%.
Symbol
v
F
Value
0.94
0.74
2.0
50
30
20
20
Unit
V
i
R
mA
t
rr
ns
t
fr
ns
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2
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G
10
7.0
5.0
3.0
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
2.0
175C
100C
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
10
7.0
5.0
3.0
2.0
100C
1.0
0.7
0.5
T
C
= 25C
0.3
0.2
175C
1.0
0.7
0.5
25C
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.1
0.07
0.05
0.03
0.02
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0.01
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
100
I
R
, REVERSE CURRENT (mA)
T
J
= 175C
10
100
I
R
, REVERSE CURRENT (mA)
Figure 2. Maximum Forward Voltage
T
J
= 175C
10
T
J
= 100C
1
T
J
= 25C
1
T
J
= 100C
T
J
= 25C
0.1
0.1
0.01
0
20
40
60
80
100
0.01
0
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
60
80
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 3. Typical Reverse Current*
* The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current
for lower voltage selections can be estimated from these
same curves if applied V
R
is sufficiently below rated V
R
.
Figure 4. Maximum Reverse Current*
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3
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G
50
45
C, CAPACITANCE (pF)
40
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
NOTE: TYPICAL
CAPACITANCE AT
0 V = 44 V
50
45
C, CAPACITANCE (pF)
40
35
30
25
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 47 V
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
I
F(AV),
AVERAGE FORWARD CURRENT (AMPS)
P
F,
AVERAGE POWER DISSIPATION (WATTS)
Figure 6. Maximum Capacitance
10
9
8
7
6
5
4
3
2
1
0
80
90
SQUARE WAVE
100 110 120 130 140 150
160 170 180
dc
RATED VOLTAGE APPLIED
R
qJC
= 13C/W
T
J
= 175C
4
3.5
3
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
SQUARE WAVE
T
J
= 175C
dc
2
2.5
T
C
, CASE TEMPERATURE (C)
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Current Derating, Case
Figure 8. Power Dissipation
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4
MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE H
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.20
2.28
0.10
0.19
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.087
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.090
0.007
0.087
0.012
0.156
0.181
0.220
0.063
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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LITERATURE FULFILLMENT:
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