RHRP8120
Data Sheet
November 2013
8 A, 1200 V, Hyperfast Diode
The RHRP8120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Features
• Hyperfast Recovery
t
rr
= 70 ns (@ I
F
= 8 A)
• Max Forward Voltage, V
F
= 3.2 V (@ T
C
= 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RHRP8120
PACKAGE
TO-220AC-2L
BRAND
RHRP8120
Packaging
JEDEC TO-220AC
ANODE
CATHODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRP8120
1200
1200
1200
8
16
100
75
20
-65 to 175
UNIT
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= 140
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20 kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60 Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
©2001 Fairchild Semiconductor Corporation
RHR8120
Rev.
C1
1
www.fairchildsemi.com
RHRP8120
Electrical Specifications
SYMBOL
V
F
I
F
= 8 A
I
F
= 8 A, T
C
= 150
o
C
I
R
V
R
= 1200 V
V
R
= 1200 V, T
C
= 150
o
C
t
rr
I
F
= 1 A, dI
F
/dt = 200 A/µs
I
F
= 8 A, dI
F
/dt = 200 A/µs
t
a
t
b
Q
rr
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µs,
D = 2%).
I
R
= Instantaneous reverse current.
T
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
rr
= Reverse Recovery Charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = Pulse Width.
D = Duty Cycle.
I
F
= 8 A, dI
F
/dt = 200 A/µs
I
F
= 8 A, dI
F
/dt = 200 A/µs
I
F
= 8 A, dI
F
/dt = 200 A/µs
V
R
= 10 V, I
F
= 0 A
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
30
20
165
25
-
MAX
3.2
2.6
100
500
55
70
-
-
-
-
2
UNIT
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
Typical Performance Curves
40
I
R
, REVERSE CURRENT (µA)
500
100
175
o
C
I
F,
FORWARD CURRENT (A)
10
10
1
100
o
C
25
o
C
0.1
0.01
175
o
C
1
100
o
C
25
o
C
0.5
0
1
2
3
V
F
, FORWARD VOLTAGE (V)
4
5
0.001
0
200
400
600
800
1000
1200
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RHRP8120 Rev. C1
2
www.fairchildsemi.com
RHRP8120
Typical Performance Curves
60
T
C
= 25
o
C, dI
F
/dt = 200A/µs
50
t, RECOVERY TIMES (ns)
40
t, RECOVERY TIMES (ns)
80
(Continued)
100
T
C
= 100
o
C, dI
F
/dt = 200A/µs
t
rr
30
20
10
0
0.5
60
t
rr
40
t
a
t
b
t
a
20
t
b
1
I
F
, FORWARD CURRENT (A)
4
8
1
I
F
, FORWARD CURRENT (A)
4
8
0
0.5
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
120
100
t, RECOVERY TIMES (ns)
80
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
T
C
= 175
o
C, dI
F
/dt = 200A/µs
10
8
DC
6
SQ. WAVE
4
t
rr
60
40
20
0
0.5
t
a
t
b
2
1
I
F
, FORWARD CURRENT (A)
4
8
0
100
115
130
145
160
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 6. CURRENT DERATING CURVE
100
C
J
, JUNCTION CAPACITANCE (pF)
80
60
40
20
0
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RHRP8120 Rev. C1
3
www.fairchildsemi.com
RHRP8120
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 8. t
rr
TEST CIRCUIT
I
MAX
= 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
©2001 Fairchild Semiconductor Corporation
RHRP8120 Rev. C1
4
www.fairchildsemi.com
RHRP8120
—
Hyperfast
Diode
Mechanical Dimensions
Figure
12.
TO-220 2L - TO-220, MOLDED, 2LD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-002.
©2001 Fairchild Semiconductor Corporation
RHRP8120 Rev. C1
5
www.fairchildsemi.com
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