This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N06-09L
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Current
b
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
On-State Drain
V
DS
=5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 15 A
Forward Transconductance
b
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, di/dt = 100 A/µs
1
45
V
DD
= 30 V, R
L
= 0.6
I
D
50 A, V
GEN
= 10 V, R
g
= 2.5
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 15 V, I
D
= 20 A
60
2650
470
225
47
10
12
10
15
35
20
20
25
50
30
100
1.5
100
A
V
ns
ns
70
nC
pF
50
0.0074
0.0093
0.0160
0.0200
0.0122
S
60
1
2
3
± 100
1
50
250
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
V
GS
= 10 thru 5 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4V
60
80
100
60
40
40
T
C
= 125 °C
20
2 V, 3 V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
20
25 °C
- 55 °C
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
120
T
C
= - 55 °C
100
g
fs
- Transconductance (S)
25 °C
80
0.009
125 °C
60
R
DS(on)
-
0.006
0.012
0.015
Transfer Characteristics
V
GS
= 4.5 V
V
GS
= 10 V
40
20
0.003
0
0
10
20
30
I
D
- Drain Current (A)
40
50
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
4000
3500
3000
C - Capacitance (pF)
C
iss
2500
2000
1500
1000
C
oss
500
C
rss
0
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
60
0
0
10
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 30 V
I
D
= 50 A
6
4
2
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
I
D
= 20 A
2.0
I
S
- Source Current (A)
T
J
= 150 °C
100
1.5
T
J
= 25 °C
10
1.0
0.5
0.0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72004.
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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