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NSVEMX1DXV6T1G

产品描述Bipolar Transistors - BJT SS DUAL NPN GEN PURP TSTR
产品类别半导体    分立半导体   
文件大小57KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSVEMX1DXV6T1G概述

Bipolar Transistors - BJT SS DUAL NPN GEN PURP TSTR

NSVEMX1DXV6T1G规格参数

参数名称属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
ON Semiconductor(安森美)
RoHSDetails
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-563-6
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max50 V
Emitter- Base Voltage VEBO7 V
Continuous Collector Current100 mA
DC Collector/Base Gain hfe Min120
系列
Packaging
Reel
Pd-功率耗散
Pd - Power Dissipation
357 mW
工厂包装数量
Factory Pack Quantity
4000
单位重量
Unit Weight
0.000106 oz

文档预览

下载PDF文档
EMX1DXV6T1G,
EMX1DXV6T5G
Dual NPN General Purpose
Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-563 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
www.onsemi.com
Reduces Board Space
High h
FE
, 210 −460 (Typical)
Low V
CE(sat)
, < 0.5 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
DUAL NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
(6)
(5)
(4)
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
60
50
7.0
100
Unit
Vdc
Vdc
Vdc
mAdc
6
Symbol
P
D
357 (Note 1)
2.9 (Note 1)
R
qJA
350 (Note 1)
mW
mW/°C
°C/W
Max
Unit
1
SOT−563
CASE 463A
STYLE 1
(1)
(2)
Tr
1
Tr
2
(3)
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance −
Junction-to-Ambient
Junction and Storage
Temperature Range
MARKING DIAGRAM
Symbol
P
D
500 (Note 1)
4.0 (Note 1)
R
qJA
T
J
, T
stg
250 (Note 1)
−55 to +150
mW
mW/°C
°C/W
°C
1
3X = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Max
Unit
3X MG
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
April, 2016 − Rev. 2
Publication Order Number:
EMX1DXV6T1/D
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