IRFH5010PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
100
9.0
67
1.2
100
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
h
Applications
•
Secondary Side Synchronous Rectification
•
Inverters for DC Motors
•
DC-DC Brick Applications
Features and Benefits
Features
Benefits
Low RDSon (< 9 mΩ)
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5010TRPBF
IRFH5010TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
100
± 20
13
11
100
70
400
3.6
250
Units
V
h
A
g
g
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
0.029
-55 to + 150
Notes
through
are on page 9.
1
www.irf.com
©
2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015
IRFH5010PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
206
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
7.5
–––
-8.3
–––
–––
–––
–––
–––
67
12
5.3
18
32
23.3
18
1.2
9
12
27
8.6
4340
425
162
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250uA
––– V/°C Reference to 25°C, I
D
= 1.0mA
9.0
mΩ V
GS
= 10V, I
D
= 50A
4.0
V
V
DS
= V
GS
, I
D
= 150μA
––– mV/°C
20
V
DS
= 100V, V
GS
= 0V
μA
250
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
S V
DS
= 25V, I
D
= 50A
101
–––
V
DS
= 50V
V
GS
= 10V
–––
nC
I
D
= 50A
–––
–––
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
–––
–––
–––
–––
–––
–––
–––
–––
Ω
ns
V
DD
= 50V, V
GS
= 10V
I
D
= 50A
R
G
=1.3Ω
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Min.
–––
–––
Typ.
–––
–––
Typ.
–––
–––
Max.
227
50
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
100
h
Conditions
MOSFET symbol
showing the
integral reverse
G
D
A
Ã
400
S
–––
–––
1.3
V
–––
34
51
ns
–––
256
384
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 50V
di/dt = 500A/μs
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
22
Units
°C/W
2
www.irf.com
©
2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015
IRFH5010PbF
1000
TOP
VGS
15V
10V
7.00V
5.00V
4.50V
4.25V
4.00V
3.75V
1000
TOP
VGS
15V
10V
7.00V
5.00V
4.50V
4.25V
4.00V
3.75V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
3.75V
10
3.75V
0.1
≤
60μs
PULSE WIDTH
0.01
0.1
1
Tj = 25°C
1
10
100
0.1
1
≤
60μs
PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 50A
2.0
ID, Drain-to-Source Current (A)
VGS = 10V
100
T J = 150°C
10
1.5
1
T J = 25°C
VDS = 50V
≤60μs
PULSE WIDTH
1.0
0.1
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance Vs. Temperature
14
ID= 50A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
VDS= 80V
VDS= 50V
VDS= 20V
10000
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
3
www.irf.com
©
2015 International Rectifier
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
Submit Datasheet Feedback
May 19, 2015
IRFH5010PbF
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 150°C
1000
TJ = 25°C
10
100
100μsec
10
1msec
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.10
1
10
100
1000
0.1
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
120
100
ID, Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
4.5
Limited By Package
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
ID = 1.0A
ID = 1.0mA
ID = 500μA
ID = 150μA
-75 -50 -25
0
25
50
75 100 125 150
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case (Bottom) Temperature
1
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage Vs. Temperature
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com
©
2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015
IRFH5010PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
25
ID = 50A
20
T J = 125°C
15
1000
EAS , Single Pulse Avalanche Energy (mJ)
800
ID
TOP
5.4A
11.6A
BOTTOM 50A
600
10
T J = 25°C
400
5
200
0
2
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
www.irf.com
©
2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
