BTA12, BTB12, T12xx
12 A Snubberless™, logic level and standard Triacs
Datasheet - production data
Applications
ON/OFF or phase angle function in applications
such as static relays, light dimmers and
appliance motors speed controllers.
The Snubberless
™
versions (BTA/BTB...W and
T12 series) are especially recommended for use
on inductive loads, because of their high
commutation performance. The BTA series
provide an insulated tab (rated at 2500 V
RMS
).
Description
Available either in through-hole or surface mount
packages, the BTA12, BTB12 and T12xx Triac
series are suitable for general purpose mains
power AC switching.
Table 1: Device summary
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
(Snubberless)
T12xx
12
BTA12
12
600/800
5/10/35/50
-
25/50
BTB12
12
Features
Medium current Triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated BTA
High commutation (4Q) or very high
commutation (3Q) capability
BTA series UL1557 certified (file ref: 81734)
Packages are RoHS (2002/95/EC) compliant
I
GT
(standard)
February 2017
DocID7473 Rev 10
1/13
www.st.com
This is information on a product in full production.
BTA12, BTB12, T12xx
1
Characteristics
Table 2: Absolute maximum ratings
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine wave)
I²PAK / D²PAK /
TO-220AB
TO-220AB Ins.
I
TSM
I
2
t
dl/dt
V
DSM
/V
RSM
I
GM
P
G(AV)
T
stg
T
j
Non repetitive surge peak on-state current
(full cycle, T
j
initial = 25 °C)
I
2
t value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
Non repetitive surge peak off-state voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 120 Hz
t
p
= 10 ms
t
p
= 20 µs
F = 50 Hz
F = 60 Hz
T
c
= 105 °C
T
c
= 90 °C
t
p
= 20 ms
t
p
= 16.7 ms
t
p
= 10 ms
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
120
126
78
50
V
DRM
/V
RRM
+
100
4
1
-40 to +150
-40 to +125
A
A
2
s
A/µs
V
A
W
°C
°C
Value
12
Unit
A
Table 3: Electrical characteristics (T
j
= 25 °C, unless otherwise specified) -
Snubberless and logic level Triac (3 quadrants)
T1205
Symbol
I
GT
(1)
V
GT
V
GD
Parameter
Quadrant
Max.
Max.
I - II - III
Min.
I - III
II
10
15
10
20
3.5
Min.
1
25
30
15
40
6.5
2.9
6.5
12
A/ms
0.2
50
60
35
500
70
80
50
1000
V
BTB12-TW
BTA12-TW
V
D
= 12 V,
R
L
= 30 Ω
V
D
= V
DRM
,
R
L
= 3.3 kΩ,
T
j
= 125 °C
I
G
= 1.2 x I
GT
I
TM
= 100 mA
V
D
= 67 % V
DRM
gate open, 125 °C
(dV/dt)c = 0.1 V/μs, 125 °C
(dI/dt)c
(2)
(dV/dt)c = 10 V/μs, 125 °C
Without snubber, 125 °C
Notes:
(1)
(2)
T1210
BTB12-SW
BTA12-SW
10
1.3
T1235
BTB12-CW
BTA12-CW
35
T1250
BTB12-BW
BTA12-BW
50
mA
V
Unit
5
I
L
I
H
(2)
dV/dt
(2)
Max.
Max.
Min.
mA
mA
V/µs
Minimum I
GT
is guaranteed at 5% of I
GT
max.
For both polarities of A2 referenced to A1
2/13
DocID7473 Rev 10
BTA12, BTB12, T12xx
Table 4: Electrical characteristics (T
j
= 25 °C, unless otherwise specified) -
standard Triac (4 quadrants)
Value
Symbol
Parameter
Quadrant
C
I
GT
(1)
V
GT
V
GD
I
L
I
H
(2)
dV/dt
(2)
(dV/dt)c
(2)
Notes:
(1)
Minimum
(2)
For
Unit
B
50
100
1.3
0.2
40
80
25
200
5
50
100
50
400
10
mA
V
V
mA
mA
V/µs
25
50
V
D
= 12 V, R
L
= 30 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ, T
j
= 125 °C
I
G
= 1.2 x I
GT
I
TM
= 500 mA
V
D
= 67 % V
DRM
, gate open, 125 °C
(dI/dt)c = 5.3 A/ms, 125 °C
I - II - III
IV
All
All
I - III - IV
II
Max.
Max.
Min.
Max.
Max.
Min.
Min.
I
GT
is guaranteed at 5% of I
GT
max.
both polarities of A2 referenced to A1.
Table 5: Static electrical characteristics
Symbol
V
TM
(1)
V
TO
(2)
R
D
(2)
I
DRM
/I
RRM
Notes:
(1)
Test Conditions
I
TM
= 17 A, t
p
= 380 µs
threshold on-state voltage
Dynamic resistance
V
DRM
= V
RRM
T
j
25 °C
125 °C
125 °C
25 °C
125 °C
Max.
Max.
Max.
Max.
Value
1.55
0.85
35
5
1
Unit
V
V
mΩ
µA
mA
For both polarities of A2 referenced to A1
Table 6: Thermal resistance
Symbol
R
th(j-c)
Junction to case (AC)
Junction to ambient (S = 1 cm²)
(1)
R
th(j-a)
Junction to ambient
Notes:
(1)
Parameter
D²PAK /
TO-220AB
TO-220AB insulated
D²PAK
TO-220AB /
TO-220AB insulated
Typ.
Typ.
Max.
Value
1.4
2.3
Unit
°C/W
45
60
Copper surface under tab.
DocID7473 Rev 10
3/13
BTA12, BTB12, T12xx
1.1
Characteristics (curves)
Figure 1: Maximum power dissipation versus
on-state RMS current (full cycle)
P(W)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
7
8
9
10
11
12
Figure 2: RMS on-state current versus case
temperature (full cycle)
IT(RMS)(A)
BTB / T 12
16
14
12
10
8
6
BTA
4
2
0
0
1
2
3
4
5
6
IT(RMS)(A)
T
C
( °C)
0
25
50
75
100
125
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35 μm) (full cycle)
IT(RMS)(A)
D
2
P A K
(S = 1 c m
2
)
Figure 4: Relative variation of thermal impedance
versus pulse duration
1E+0
K = [Z
th
/R
th
]
Z th(j-c)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T
C
(°C)
0.0
0
25
50
75
100
125
Z th(j-a)
1E-1
1E-2
1E-3
1E-2
1E-1
tP( s )
1E+0
1E+1
1E+2
5E+2
Figure 5: On-state characteristics
(maximum values)
Figure 6: Surge peak on-state current versus
number of cycles
4/13
DocID7473 Rev 10
BTA12, BTB12, T12xx
Figure 7: Non-repetitive surge peak on-state
current
Figure 8: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values)
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
5.0
4.5
Figure 10: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (TW)
(dI/dt )c [(d V/dt )c] / specified (dI/dt )c
4.0
TW
3.5
3.0
2.5
2.0
1.5
1.0
0.5
(dV/dt)c(V/µs)
0.0
0.1
1.0
10.0
100.
0
Figure 11: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 12: Thermal resistance junction to ambient
versus copper surface under tab (printed circuit
board FR4, copper thickness: 35 μm)
80
70
60
R
th(j-a)
(°C/W)
50
40
30
20
Epoxy printed board FR4, eCU= 35 µm
10
S
Cu
(cm²)
0
0
5
10
15
20
25
30
35
40
DocID7473 Rev 10
5/13
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