VS-50PF(R)...(W) Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 50 A
FEATURES
50PF(R)...
50PF(R)...W
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• Designed and qualified for multiple level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-5 (DO-203AB)
DO-5 (DO-203AB)
TYPICAL APPLICATIONS
• Battery charges
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
50 A
DO-5 (DO-203AB)
Single
• Converters
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
C
TEST CONDITIONS
VALUES
50
140
78
800
830
3200
2900
400 to 1200
-55 to +180
UNITS
A
°C
A
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
40
VS-50PF(R)...(W)
80
120
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
960
1440
9
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
Revision: 11-Jan-18
Document Number: 93516
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50PF(R)...(W) Series
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
180° conduction, half sine wave
VALUES
50
140
78
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
800
830
670
Sinusoidal half wave,
initial T
J
= 150 °C
700
3200
2900
2260
2050
32 000
0.77
4.30
1.40
A
2
s
V
m
V
A
2
s
A
UNITS
A
°C
A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)
r
f
V
FM
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 125 A, T
J
= 25 °C, t
p
= 400 μs rectangular wave
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Tighting on nut
(1)
Not lubricated threads
Tighting on hexagon
lubricated threads
(2)
TEST CONDITIONS
VALUES
-55 to +180
0.51
UNITS
°C
K/W
0.25
3.4
+ 0 - 10 %
(30)
2.3
+ 0 - 10 %
Allowable mounting torque
N·m
(lbf · in)
g
oz.
(20)
15.8
0.56
Approximate weight
Case style
See dimensions - link at the end of datasheet
DO-5 (DO-203AB)
Notes
(1)
As general recommendation we suggest to tight on Hexagon and not on nut
(2)
Torque must be applicable only to Hexagon and not to plastic structure
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.11
0.16
0.20
0.29
0.49
RECTANGULAR CONDUCTION
0.10
0.16
0.22
0.31
0.50
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93516
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50PF(R)...(W) Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
180
170
160
50PF(R) Serie
RthJC = 0.51 K/W
180
170
160
150
30°
50PF(R) Series
RthJC (DC) = 0.51 K/W
Conduction Angle
Conduction Period
150
140
180°
130
120
110
0
10
20
30
30°
60°
120°
90°
140
130
120
0
10 20
60°
90°
120°
180°
DC
40
50
60
30
40 50
60 70
80
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Allowable Forward Power Loss (W)
100
80
60
40
20
0
0
180°
120°
90°
60°
30°
RMS Limit
1
K/W
0.7
1.5
K/
W
2K
/W
K/
W
3K
5K
/W
/W
Conduction Angle
7 K
/W
50PF(R) Series
Tj = 180°C
10 K/
W
10
20
30
40
50
0
60
30
60
90
120
150
180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Allowable Forward Power Loss (W)
100
80
60
40
20
50PF(R) Series
Tj = 180°C
180°
120°
90°
60°
30°
RMS Limit
1
K/W
0.7
1.5
K/
W
K/
W
DC
2K
/W
3K
/W
5K
Conduction Period
/W
7K
/W
10 K/
W
0
0
20
40
60
0
80
30
60
90
120
150
180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93516
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50PF(R)...(W) Series
www.vishay.com
Vishay Semiconductors
1000
Peak Haf Sine Wave Forward Current (A)
800
700
600
500
400
300
200
1
Rated Vrrm Applied Following Surge.
Initial Tj = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Instantaneous Forward Current (A)
At Any Rated Load Condition And With
100
10
Tj = 25°C
Tj = 180°C
50PF(R) Series
50PF(R) Series
1
10
100
0
1
2
3
4
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Peak Haf Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
800
Initial Tj = 150°C
700
No Voltage Reapplied
Transient Thermal Impedance Z
thJC
(K/W)
900
1
Steady State Value
RthJC = 0.51 K/W
(DC Operation)
600
500
400
300
200
50PF(R) Series
Rated Vrrm Reapplied
0.1
50PF(R) Series
100
0.01
0.1
Pulse Train Duration (s)
1
0.01
0.0001 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Jan-18
Document Number: 93516
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50PF(R)...(W) Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
50
2
PF
3
R
4
120
5
W
6
1
2
-
-
Vishay Semiconductors product
50 = standard device
52 = isolated lead on standard terminal
with silicone sleeve available for 1200 V only
(red = reverse polarity)
(blue = normal polarity)
3
4
5
6
-
-
-
-
PF = plastic package
None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
None = standard terminal
(see dimensions for 50PF(R)... - link at the end of datasheet)
W = wire terminal
(see dimensions for 50PF(R)...W - link at the end of datasheet)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95345
Revision: 11-Jan-18
Document Number: 93516
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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