RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FR801
THRU
FR807
FAST RECOVERY
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
FEATURES
*
*
*
*
*
*
Fast switching
Low leakage
Low forward voltage drop
High current capability
High surge capability
High reliability
TO-220A
.187 (4.7)
.148 (3.8)
.153 (3.9)
.146 (3.7)
.270 (6.9)
.230 (5.8)
.610 (15.5)
.583 (14.8)
.04MAX.
(1.0)
.157
(4.0)
.051
(1.3)
.035 (0.9)
.028 (0.7)
.102 (2.6)
.091 (2.3)
.583 (14.8)
.531 (13.5)
.053 (1.3)
.047 (1.2)
MECHANICAL DATA
*
*
*
*
*
*
Case: TO-220A molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 2.24 grams
Polarity: As marking
.108
(2.75)
.413 (10.5)
.374 (9.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.022 (0.56)
.014 (0.36)
.126
(3.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
C
= 75
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JC
C
J
T
J
, T
STG
FR801
50
35
50
FR802
100
70
100
FR803
200
140
200
FR804
400
280
400
8.0
200
3
50
-55 to + 150
FR805
600
420
600
FR806
800
560
800
FR807
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
0
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 8.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current Average,
Full Cycle at T
C
= 100
o
C
Maximum Reverse Recovery Time (Note 1)
SYMBOL
V
F
FR801
FR802
FR803
FR804
1.3
10
I
R
150
trr
150
250
500
uAmps
nSec
2003-1
FR805
FR806
FR807
UNITS
Volts
uAmps
o
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts
3. Thermal Resistance Junction to Case.
4. Suffix “R” for Reverse Polarity.
RATING AND CHARACTERISTIC CURVES ( FR801 THRU FR807 )
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
PEAK FORWARD SURGE
CURRENT, (A)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
300
250
200
150
100
50
0
1
2
5
10 20
50
NUMBER OF CYCLES AT 60Hz
100
8.3ms Single Half
Sine-Wave
(JEDED Method)
8
6
4
Single Phase Half Wave
60Hz Inductive or
Resistive Load
2
0
0
25
50
75 100 125 150 175
CASE TEMPERATURE, (
o
C)
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
20
10
3.0
1.0
0.3
0.1
.03
.01
0.4
TJ = 25 C
Pulse Width=300uS
1% Duty Cycle
o
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
INSTANTANEOUS REVERSE
CURRENT, (uA)
6
4
2
1.0
.6
.4
.2
.1
.06
.04
.02
.01
TJ = 25
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
TJ = 25 C
o
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
0
PULSE
GENERATOR
(+)
25 Vdc
(approx)
(-)
D.U.T
-0.25A
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
1
NOTES: Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
1cm
SET TIME BASE FOR
50/100 ns/cm
RECTRON
Microchip MCU
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