PD - 97289
IRG4PC20UPbF
PROVISIONAL
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
C
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.85V
@V
GE
= 15V, I
C
= 6.5A
n-channel
C
E
C
G
TO-247AC
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
G
Gate
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Power Dissipation
Power Dissipation
C
Collector
Max.
600
13
6.5
52
52
±20
5.0
60
24
-55 to + 150
E
Emitter
Units
V
A
c
d
e
V
mJ
W
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in.) (1.6mm from case)
10lb in (1.1N m)
x
x
N
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
07/11/07
1
PROVISIONAL
IRG4PC20UPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
V
(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Min.
Typ. Max. Units
–––
–––
0.69
1.85
2.27
1.87
–––
-11
4.3
–––
–––
–––
–––
–––
–––
–––
–––
2.1
–––
–––
6.0
–––
–––
250
2.0
1000
100
-100
nA
V
V
Conditions
V
GE
= 0V, I
CE
= 250µA
∆V
(BR)CES
/∆T
J
Breakdown Voltage Temp. Coefficient
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
Collector-to-Emitter Saturation Voltage
f
600
18
–––
–––
–––
V
GE
= 0V, I
CE
= 1.0A
V/°C V
GE
= 0V, I
CE
= 1.0mA
V
GE
= 15V, I
CE
= 6.5A
V
V
GE
= 15V, I
CE
= 13A
V
GE
= 15V, I
CE
= 6.5A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 250µA
V
mV/°C
V
CE
= 100V, I
CE
= 6.5A
S
µA
V
CE
= 600V, V
GE
= 0V
V
CE
= 10V, V
GE
= 0V, T
J
= 25°C
V
CE
= 600V, V
GE
= 0V, T
J
= 150°C
V
GE
= 20V
V
GE
= -20V
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
g
3.0
–––
1.4
–––
–––
–––
I
GES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
–––
–––
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
(on)
E
(off)
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
27
4.5
10
21
13
86
120
0.10
0.12
0.22
20
14
190
140
0.42
7.5
530
39
7.4
41
6.8
16
–––
–––
130
180
–––
–––
0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
mJ
nH
ns
mJ
I
C
= 6.5A, V
CC
= 480V
V
GE
= 15V, R
G
= 50Ω
T
J
= 150°C
Energy losses include "tail"
Measured 5mm from package
V
GE
= 0V
V
CE
= 30V
ƒ = 1.0MHz
ns
nC
V
CE
= 400V
I
C
= 6.5A
V
GE
= 15V
e
I
C
= 6.5A, V
CC
= 480V
V
GE
= 15V, R
G
= 50Ω
T
J
= 25°C
Energy losses include "tail"
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature.
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 50Ω.
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
2
www.irf.com
PROVISIONAL
IRG4PC20UPbF
25
For both:
Triangular wave:
I
20
Duty cycle: 50%
T
J
= 125°C
T
sink
= 90°C
Gate drive as specified
Power Dissipation = 13W
Load Current ( A )
Clamp voltage:
80% of rated
15
Square wave:
60% of rated
voltage
10
I
5
Ideal diodes
0
0.1
1
10
A
100
f, Frequency (kHz)
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 1
- Typical Load Current vs. Frequency
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25°C
T
J
= 150°C
10
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150°C
T
J
= 25°C
1
1
0.1
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
10
0.1
4
6
8
V
CC
= 10V
5µs PULSE WIDTH
A
10
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
A
Fig. 3
- Typical Transfer Characteristics
3
www.irf.com
PROVISIONAL
IRG4PC20UPbF
14
Maximum DC Collector Current (A)
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
= 15V
2.6
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 13A
10
2.2
8
1.8
6
I
C
= 6.5A
4
1.4
I
C
= 3.3A
2
0
25
50
75
100
125
150
1.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
2
t
1
t2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
PROVISIONAL
IRG4PC20UPbF
1000
C, Capacitance (pF)
800
V
GE
, Gate-to-Emitter Voltage (V)
A
C
ies
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CE
= 400V
I
C
= 6.5A
16
600
12
C
oes
400
8
200
C
res
4
0
1
10
0
0
5
10
15
20
25
A
30
100
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.23
Total Switching Losses (mJ)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 25°C
= 6.5A
0.22
0.21
0.20
0
10
20
30
40
50
A
60
R
G
, Gate Resistance (
Ω
)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
