NTLUS3C18PZ
Power MOSFET
−12 V, −7.0 A, Single P−Channel,
1.6x1.6x0.5 mm UDFN6 Package
Features
•
Ultra Low R
DS(on)
•
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
•
Low Profile UDFN 1.6 x 1.6 x 0.5 mm for Board Space Saving
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
V
(BR)DSS
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MOSFET
R
DS(on)
MAX
24 mW @ −4.5 V
27 mW @ −3.7 V
−12 V
30 mW @ −3.3 V
36 mW @ −2.5 V
70 mW @ −1.8 V
S
I
D
MAX
−7.0 A
−6.6 A
−6.3 A
−5.7 A
−4.1 A
•
Optimized for Power Management Applications for Portable
Products, Such as Smart Phones and Media Tablets
•
Battery Switch
•
High Side Load Switch
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipa-
tion (Note 1)
Steady
State
t
≤
5s
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
tp = 10
ms
P
D
I
DM
T
J
,
T
STG
I
S
T
L
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
−12
±10
−7.0
−5.1
−10.5
1.71
3.83
−4.4
−3.1
0.66
−21
-55 to
150
−1.7
260
W
A
°C
A
1
AA
M
G
W
6
Unit
V
V
A
G
D
P−Channel MOSFET
MARKING DIAGRAM
1
UDFN6
CASE 517AU
AAMG
G
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
October, 2017 − Rev. 2
Publication Order Number:
NTLUS3C18PZ/D
NTLUS3C18PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t
≤
5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
2
, 2 oz. Cu.
Symbol
R
θJA
R
θJA
R
θJA
Max
72
32.6
190.4
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= −4.5 V, I
D
= −7.0 A
V
GS
= −3.7 V, I
D
= −6.6 A
V
GS
= −3.3 V, I
D
= −5.7 A
V
GS
= −2.5 V, I
D
= −5.1 A
V
GS
= −1.8 V, I
D
= −2.0 A
Forward Transconductance
g
FS
V
DS
= −5 V, I
D
= −7.0 A
V
GS
= V
DS
, I
D
= −250
mA
−0.4
3.0
20
22
24
29
44
21.8
24
27
30
36
70
S
−1.0
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= −250
mA
I
D
= −250
mA,
ref to 25°C
V
GS
= 0 V,
V
DS
= −9.6 V
T
J
= 25°C
−12
7.3
−1.0
±10
V
mV/°C
mA
mA
Symbol
Test Condition
Min
Typ
Max
Units
V
DS
= 0 V, V
GS
=
±10
V
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −1.7 A
T
J
= 25°C
T
J
= 125°C
0.71
0.58
1.0
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= −4.5 V, V
DD
= −6 V,
I
D
= −7.0 A, R
G
= 1
W
8.5
52.5
40
59
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= −4.5 V, V
DS
= −6.0 V;
I
D
= −7.0 A
V
GS
= 0 V, f = 1 MHz,
V
DS
= −6.0 V
1570
200
240
15.8
0.7
1.9
4.6
nC
pF
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTLUS3C18PZ
TYPICAL CHARACTERISTICS
−4.5 V to −2.5 V
−I
D
, DRAIN CURRENT (A)
15
V
GS
= −2.0 V
−I
D
, DRAIN CURRENT (A)
15
V
DS
≤
−10 V
T
J
= −55°C
T
J
= 25°C
T
J
= 125°C
V
GS
= −1.8 V
10
10
5
.
5
0
0
0.5
1.0
1.5
2.0
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0
0.5
1.0
1.5
2.0
2.5
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
−V
GS
, GATE VOLTAGE (V)
T
J
= 25°C
I
D
= −7 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.05
0.04
V
GS
= −1.8 V
T
J
= 25°C
V
GS
= −2.5 V
0.03
0.02
0.01
0
0
5
10
15
20
−I
D
, DRAIN CURRENT (A)
V
GS
= −4.5 V
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
1E−09
−25
0
25
50
75
100
125
150
V
GS
= −4.5 V
I
D
= −7 A
1E−05
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−I
DSS
, LEAKAGE (nA)
T
J
= 125°C
1E−06
1E−07
T
J
= 85°C
1E−08
2
4
6
8
10
12
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTLUS3C18PZ
TYPICAL CHARACTERISTICS
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
2000
C
ISS
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
Q
T
4
V
GS
16
14
12
1500
3
Q
GS
Q
GD
V
DS
= −6 V
T
J
= 25°C
I
D
= −10 A
10
8
6
4
2
1000
C
OSS
500
C
RSS
0
0
2
4
6
8
10
12
−V
DS
, DRAIN−TO−SOURCE (V)
2
1
0
0
2
4
6
8
10
12
14
16
Q
G
, TOTAL GATE CHARGE (nC)
0
18
Figure 7. Capacitance Variation
1000
t
d(off)
t
f
t
r
−I
S
, SOURCE CURRENT (A)
V
GS
= −4.5 V
V
DD
= −6 V
I
D
= −10 A
T, TIME (ns)
100
10
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
T
J
= 25°C
T
J
= 125°C
1
T
J
= −55°C
t
d(on)
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.95
0.85
0.75
−V
GS(th)
(V)
0.65
0.55
0.45
0.35
0.25
0.15
−50
0.01
−25
0
25
50
75
100
125
150
I
D
= −250
mA
−I
D
, DRAIN CURRENT (A)
10
100
Figure 10. Diode Forward Voltage vs. Current
10
ms
100
ms
1
V
GS
= −8 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
1 ms
10 ms
dc
0.1
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Threshold Voltage
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
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4
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
2500
5
18
NTLUS3C18PZ
TYPICAL CHARACTERISTICS
225
200
175
POWER (W)
150
125
100
75
50
25
0
1E−05
1E−03
1E−01
1E+01
1E+03
SINGLE PULSE TIME (s)
Figure 13. Single Pulse Maximum Power
Dissipation
80
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
70
60
50
40
30
20
10
0
1E−06
1E−05
1E−04
1E−03
0.20
0.10
Single Pulse
1E−02
t, TIME (s)
1E−01
1E+00
1E+01
1E+02
1E+03
Duty Cycle = 0.5
0.05
0.02
0.01
R
qJA
= 72°C/W
Figure 14. FET Thermal Response
DEVICE ORDERING INFORMATION
Device
NTLUS3C18PZTAG
NTLUS3C18PZTBG
Package
UDFN6
(Pb−Free)
UDFN6
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
stm32/stm8
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