MBT3906DW1,
SMBT3906DW1
Dual General Purpose
Transistor
The MBT3906DW1 device is a spin−off of our popular
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
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•
•
•
•
•
•
•
h
FE
, 100−300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Electrostatic Discharge
Symbol
V
CEO
V
CBO
V
EBO
I
C
ESD
Value
−40
−40
−5.0
−200
Unit
Vdc
Vdc
Vdc
mAdc
SOT−363/SC−88
CASE 419B
STYLE 1
(3)
(2)
(1)
Q
1
Q
2
(4)
(5)
(6)
MARKING DIAGRAM
6
A2 M
G
G
1
A2 = Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
HBM Class 2
MM Class B
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MBT3906DW1T1G
Package
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
SOT−363
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
3,000 /
Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55
to +150
Unit
mW
°C/W
°C
MBT3906DW1T2G
SMBT3906DW1T1G
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
July, 2013
−
Rev. 5
1
Publication Order Number:
MBT3906DW1T1/D
MBT3906DW1, SMBT3906DW1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 2)
Collector
−Base
Breakdown Voltage
Emitter
−Base
Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
−40
−40
−5.0
−
−
−
−
−
−50
−50
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
=
−0.1
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−1.0
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−10
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−50
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−100
mAdc, V
CE
=
−1.0
Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mAdc, I
B
=
−1.0
mAdc)
(I
C
=
−50
mAdc, I
B
=
−5.0
mAdc)
h
FE
−
60
80
100
60
30
−
−
−0.65
−
−
−
300
−
−
Vdc
−0.25
−0.4
Vdc
−0.85
−0.95
V
CE(sat)
V
BE(sat)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Small
−Signal
Current Gain
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
=
−10
Vdc, I
C
=
−1.0
mAdc, f = 1.0 kHz)
Noise Figure
(V
CE
=
−5.0
Vdc, I
C
=
−100
mAdc,
R
S
= 1.0 k
W,
f = 1.0 kHz)
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
−
4.0
250
−
−
2.0
0.1
100
3.0
−
4.5
10.0
12
X 10
−
4
10
−
400
60
mmhos
dB
MHz
pF
pF
kW
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
=
−3.0
Vdc, V
BE
= 0.5 Vdc)
(I
C
=
−10
mAdc, I
B1
=
−1.0
mAdc)
(V
CC
=
−3.0
Vdc, I
C
=
−10
mAdc)
(I
B1
= I
B2
=
−1.0
mAdc)
t
d
t
r
t
s
t
f
−
−
−
−
35
35
225
75
ns
ns
2. Pulse Test: Pulse Width
≤
300
ms;
Duty Cycle
≤
2.0%.
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2
MBT3906DW1, SMBT3906DW1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
=
−
5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
5.0
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50
mA
12
f = 1.0 kHz
10
I
C
= 0.5 mA
8
6
4
2
0
I
C
= 50
mA
I
C
= 100
mA
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
4.0
3.0
2.0
SOURCE RESISTANCE = 2.0 k
I
C
= 100
mA
0.2
0.4
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
40
100
1.0
0
0.1
0.1
0.2
0.4
1.0 2.0
4.0
10
20
R
g
, SOURCE RESISTANCE (k OHMS)
40
100
Figure 7.
Figure 8.
h PARAMETERS
(V
CE
=
−
10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
100
70
50
30
20
h fe , DC CURRENT GAIN
200
100
70
50
10
7
30
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 9. Current Gain
20
h ie , INPUT IMPEDANCE (k OHMS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
h
re
, VOLTAGE FEEDBACK RATIO (x 10
-4
)
10
7.0
5.0
3.0
2.0
Figure 10. Output Admittance
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
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4
MBT3906DW1, SMBT3906DW1
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
T
J
= +125°C
1.0
0.7
0.5
0.3
0.2
- 55°C
+25°C
V
CE
= 1.0 V
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
Figure 13. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
I
B
, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 14. Collector Saturation Region
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
q
V , TEMPERATURE COEFFICIENTS (mV/
°
C)
1.0
1.0
0.5
0
- 0.5
+25°C TO +125°C
- 1.0
- 55°C TO +25°C
- 1.5
- 2.0
q
VB
FOR V
BE(sat)
q
VC
FOR V
CE(sat)
+25°C TO +125°C
0.6
- 55°C TO +25°C
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0
1.0
2.0
50
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
100
200
0
20
40
60
80 100 120 140
I
C
, COLLECTOR CURRENT (mA)
160
180 200
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
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