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BC856- BC860 PNP Epitaxial Silicon Transistor
August 2006
BC856- BC860
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
2
1
3
tm
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
V
CBO
Collector-Base Voltage
T
a
= 25°C unless otherwise noted
Parameter
: BC856
: BC857/860
: BC858/859
Value
-80
-50
-30
-65
-45
-30
-5
-100
310
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
V
CEO
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
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