IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
Rev. 04 — 2 March 2009
Product data sheet
1. Product profile
1.1 General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
1.2 Features and benefits
High reverse voltage surge capability
High thermal cycling performance
Low thermal resistance
Soft recovery characteristic minimizes
power consuming oscillations
Very low on-state loss
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
V
RRM
I
O(AV)
Quick reference
Conditions
Min
-
square-wave pulse;
δ
= 0.5;
T
mb
≤
115 °C; both diodes
conducting; see
Figure 1;
see
Figure 2
t
p
= 2 µs;
δ
= 0.001
HBM; C = 250 pF; R = 1.5
kΩ; all pins
I
F
= 1 A; V
R
= 30 V;
dI
F
/dt = 100 A/µs;
T
j
= 25 °C; ramp recovery;
see
Figure 5
I
R
= 1 A; I
F
= 0.5 A;
T
j
= 25 °C; measured at
reverse current = 0.25 A;
step recovery; see
Figure 6
Static characteristics
V
F
forward voltage
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
-
0.72
0.85
V
-
Typ
-
-
Max
100
20
Unit
V
A
repetitive peak
reverse voltage
average output
current
Symbol Parameter
I
RRM
V
ESD
repetitive peak
reverse current
electrostatic
discharge voltage
reverse recovery
time
-
-
-
-
0.2
8
A
kV
Dynamic characteristics
t
rr
-
20
25
ns
-
10
20
ns
NXP Semiconductors
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
A1
K
A2
K
Description
anode 1
cathode
anode 2
mounting base; cathode
mb
A1
K
sym125
Simplified outline
Graphic symbol
A2
1 2 3
SOT78
(TO-220AB; SC-46)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BYV32E-100
TO-220AB;
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
SC-46
TO-220AB
BYV32E-100_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 2 March 2009
2 of 9
NXP Semiconductors
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
DC
square-wave pulse;
δ
= 0.5; T
mb
≤
115 °C; both
diodes conducting; see
Figure 1;
see
Figure 2
δ
= 0.5; t
p
= 25 µs; T
mb
≤
115 °C; per diode
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C; per
diode
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C; per
diode
I
RRM
I
RSM
T
stg
T
j
V
ESD
repetitive peak reverse
current
non-repetitive peak
reverse current
storage temperature
junction temperature
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ; all pins
δ
= 0.001; t
p
= 2 µs
t
p
= 100 µs
Conditions
Min
-
-
-
-
-
-
-
-
-
-40
-
-
Max
100
100
100
20
20
137
125
0.2
0.2
150
150
8
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
In accordance with the Absolute Maximum Rating System (IEC 60134).
12
P
tot
(W)
1.9
2.2
a = 1.57
003aac978
15
P
tot
(W)
0.5
003aac979
δ
=1
8
4.0
2.8
10
0.2
0.1
4
5
0
0
4
8
I
F(AV)
(A)
12
0
0
5
10
I
F(AV)
(A)
15
Fig 1.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
BYV32E-100_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 2 March 2009
3 of 9
NXP Semiconductors
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
60
Max
1.6
2.4
-
Unit
K/W
K/W
K/W
thermal resistance from with heatsink compound; both diodes
junction to mounting
conducting
base
with heatsink compound; per diode; see
Figure 3
thermal resistance from
junction to ambient
R
th(j-a)
10
Z
th(j-mb)
(K/W)
1
003aac980
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
6. Characteristics
Table 6.
Symbol
V
F
I
R
Characteristics
Parameter
forward voltage
reverse current
Conditions
I
F
= 8 A; T
j
= 150 °C; see
Figure 4
I
F
= 20 A; T
j
= 25 °C
V
R
= 100 V; T
j
= 100 °C
V
R
= 100 V; T
j
= 25 °C
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/µs;
T
j
= 25 °C
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
ramp recovery; T
j
= 25 °C; see
Figure 5
I
F
= 0.5 A; I
R
= 1 A; measured at reverse
current = 0.25 A; step recovery; T
j
= 25 °C;
see
Figure 6
V
FR
forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 10 A/µs; T
j
= 25 °C; see
Figure 7
-
-
-
8
20
10
12.5
25
20
nC
ns
ns
Min
-
-
-
-
Typ
0.72
1
0.2
6
Max
0.85
1.15
0.6
30
Unit
V
V
mA
µA
Static characteristics
-
-
1
V
BYV32E-100_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 2 March 2009
4 of 9
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