MRF173
RF POWER FET
N-Channel Enhancement Mode
DESCRIPTION:
The
ASI MRF173
is Designed for
wideband large-signal output and
driver stages up to 200 MHz frequency
range.
PACKAGE STYLE .500 4L FLG
B
.112 x 45°
A
FEATURES:
•
P
G
= 11 dB Min. at 150 MHz
•
30:1 Load VSWR
Capability
•
Omnigold™
Metalization System
F
S
D
S
C
D
E
Ø.125 NOM.
FULL R
J
.125
G
MAXIMUM RATINGS
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
θ
JC
9.0 A
DIM
MINIMUM
inches / mm
I
GH
MAXIMUM
inches / mm
65 V
±40
V
220 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.8 °C/W
A
B
C
D
E
F
G
H
I
J
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.004 / 0.10
.085 / 2.16
.160 / 4.06
.240 / 6.10
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
P
G
η
D
ψ
T
C
= 25 °C
NONE
TEST CONDITIONS
I
DS
= 50 mA
V
DS
= 28 V
V
DS
= 0 V
I
D
= 50 mA
I
D
= 2.0 A
V
GS
= 0 V
V
GS
= 40 V
V
DS
= 10 V
V
DS
= 10 V
MINIMUM
65
TYPICAL MAXIMUM
2.0
1.0
UNITS
V
mA
µA
V
mho
1.0
1.8
2.2
110
105
10
11
55
13
60
6.0
V
DS
= 28 V
V
DD
= 28 V
V
GS
= 0 V
I
DQ
= 50 mA
f = 1.0 MHz
P
out
= 80 W
f = 150 MHz
pF
dB
%
V
SWR
= 30:1
AT ALL PHASE ANGLES
NO DEGRADATION IN OUTPUT POWER
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
嵌入式系统
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