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VSB1545-M3-54

产品描述Infrared Emitters - High Power Infrared 940nm OSLON Black
产品类别半导体    分立半导体   
文件大小86KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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VSB1545-M3-54概述

Infrared Emitters - High Power Infrared 940nm OSLON Black

VSB1545-M3-54规格参数

参数名称属性值
产品种类
Product Category
Schottky Diodes & Rectifiers
制造商
Manufacturer
Vishay(威世)
RoHSDetails
产品
Product
Schottky Rectifiers
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
P600
If - Forward Current15 A
Vrrm - Repetitive Reverse Voltage45 V
Ifsm - Forward Surge Current200 A
ConfigurationSingle
技术
Technology
Si
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Reel
工作温度范围
Operating Temperature Range
- 40 C to + 150 C
工厂包装数量
Factory Pack Quantity
800
单位重量
Unit Weight
0.074075 oz

文档预览

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VSB1545-M3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.33 V at I
F
= 5.0 A
FEATURES
• Trench MOS Schottky technology
Photovoltaic Solar Cell Protection Schottky Rectifier
TMBS
®
• Low forward voltage drop, low power losses
• High efficiency operation
• High forward surge capability
• ESD capability
P600
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• T
J
200 °C max. in solar bypass mode application
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 15 A
T
OP
max. (AC mode)
T
J
max. (DC forward current)
Package
Diode variation
15 A
45 V
200 A
0.44 V
150 °C
200 °C
P600
Single die
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case:
P600
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction temperature range
Storage temperature range
Junction temperature in DC forward current without
reverse bias, t
1 hp
V
RRM
I
F(AV) (1)
I
F(AV) (2)
I
FSM
T
OP
T
STG
T
J (3)
SYMBOL
VSB1545
V1545
45
15
6
200
-40 to +150
-40 to +175
200
V
A
A
°C
°C
°C
UNIT
Notes
(1)
With heatsink
(2)
Without heatsink, free air
(3)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 22-Nov-13
Document Number: 89390
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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