Data Sheet
4V Drive Nch + Pch MOSFET
SH8M14
Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(SOP8).
3) Low voltage drive(4V drive).
Dimensions
(Unit : mm)
SOP8
(8)
(5)
(1)
(4)
Application
Switching
Packaging specifications
Type
SH8M14
Package
Code
Basic ordering unit (pieces)
Taping
TB
2500
Inner circuit
(8)
(7)
(6)
(5)
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
I
D
I
DP
*1
I
s
I
sp
*1
P
D
Tch
Tstg
*2
Continuous
Pulsed
Continuous
Pulsed
Limits
Tr1 : N-ch Tr2 : P-ch
30
30
20
20
9
7
36
28
1.6
1.6
36
28
2.0
1.4
150
55
to
150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
(1)
(2)
(3)
∗1
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/10
2011.06 - Rev.A
SH8M14
Electrical characteristics
(Ta = 25C)
<Tr1(Nch)>
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Data Sheet
Symbol
I
GSS
I
DSS
V
GS (th)
*
R
DS (on)
l Y
fs
l *
C
iss
C
oss
C
rss
t
d(on)
*
t
r
t
f
*
*
t
d(off)
*
Q
g
*
Q
gs
*
Q
gd
*
Min.
-
30
-
1.0
-
-
5.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
15
18
20
-
630
230
110
10
33
42
10
8.5
2.3
4.0
Max.
10
-
1
2.5
21
25
28
-
-
-
-
-
-
-
-
-
-
-
Unit
A
V
A
V
Conditions
V
GS
=±20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=9A, V
GS
=10V
Drain-source breakdown voltage V
(BR)DSS
m I
D
=9A, V
GS
=4.5V
I
D
=9A, V
GS
=4V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
=10V, I
D
=9A
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=4.5A, V
DD
15V
V
GS
=10V
R
L
=3.3
R
G
=10
I
D
=9A, V
DD
15V
V
GS
=5V
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=9A, V
GS
=0V
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© 2011 ROHM Co., Ltd. All rights reserved.
2/10
2011.06 - Rev.A
SH8M14
Electrical characteristics
(Ta = 25C)
<Tr2(Pch)>
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Data Sheet
Symbol
I
GSS
I
DSS
V
GS (th)
*
R
DS (on)
l Y
fs
l *
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
Min.
-
30
1.0
-
-
-
6.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
21.5
29.0
31.0
-
1200
170
170
12
40
80
65
18
3.5
6.5
Max.
10
-
1
2.5
29.0
39.0
40.8
-
-
-
-
-
-
-
-
-
-
-
Unit
A
V
A
V
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=7A, V
GS
=10V
Drain-source breakdown voltage V
(BR)DSS
m I
D
=3.5A, V
GS
=4.5V
I
D
=3.5A, V
GS
=4.0V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
=10V, I
D
=7A
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=3.5A, V
DD
15V
V
GS
=10V
R
L
=4.27
R
G
=10
I
D
=7A, V
DD
15V
V
GS
=5V
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=7A, V
GS
=0V
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© 2011 ROHM Co., Ltd. All rights reserved.
3/10
2011.06 - Rev.A
SH8M14
Electrical
characteristic curves
(Ta=25C)
〈Tr.1(Nch)〉
Fig.1 Typical Output Characteristics (Ⅰ)
9
8
7
Drain Current : I
D
[A]
V
GS
=10.0V
V
GS
=4.5V
V
GS
=4.0V
V
GS
=3.0V
V
GS
=2.8V
Data Sheet
Fig.2 Typical Output Characteristics (Ⅱ)
9
8
7
Drain Current : I
D
[A]
6
V
GS
=3.0V
5
4
3
2
V
GS
=2.8V
V
GS
=10.0V
V
GS
=4.5V
V
GS
=4.0V
V
GS
=2.5V
6
5
4
3
2
1
0
V
GS
=2.5V
T
a
=25°C
Pulsed
0
0.2
0.4
0.6
0.8
1
1
0
T
a
=25°C
Pulsed
0
2
4
6
8
10
Drain-Source Voltage : V
DS
[V]
Drain-Source Voltage : V
DS
[V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
1000
T
a
=25°C
Pulsed
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
1000
V
GS
=10V
pulsed
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
100
V
GS
=4.0V
V
GS
=4.5V
V
GS
=10V
100
10
10
1
0.01
0.1
1
Drain Current : I
D
[A]
10
100
1
0.01
0.1
1
Drain Current : I
D
[A]
10
100
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
1000
V
GS
=4.5V
pulsed
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
V
GS
=4V
pulsed
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
100
100
10
10
1
0.01
0.1
1
Drain Current : I
D
[A]
10
100
1
0.01
0.1
1
Drain Current : I
D
[A]
10
100
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© 2011 ROHM Co., Ltd. All rights reserved.
4/10
2011.06 - Rev.A
SH8M14
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
V
DS
=10V
pulsed
100
V
DS
=10V
pulsed
10
Fig.8 Typical Transfer Characteristics
Forward Transfer Admittance
Y
fs
[S]
10
Drain Currnt : I
D
[A]
1
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
1
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
0.1
0.1
0.01
0.01
0.001
0.01
0.1
1
10
100
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Drain Current : I
D
[A]
Gate-Source Voltage : V
GS
[V]
Fig.9 Source Current vs. Source-Drain Voltage
100
V
GS
=0V
pulsed
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
50
T
a
=25°C
Pulsed
40
I
D
=4.5A
I
D
=9.0A
10
Source Current : Is [A]
1
T
a
=125°C
T
a
=75°C
T
a
=25°C
T
a
=-25°C
30
20
0.1
10
0.01
0.0
0.5
1.0
1.5
2.0
0
0
2
4
6
8
10
Source-Drain Voltage : V
SD
[V]
Gate-Source Voltage : V
GS
[V]
Fig.11 Switching Characteristics
10000
V
DD
≒15V
V
GS
=10V
R
G
=10Ω
T
a
=25°C
Pulsed
t
f
10
T
a
=25°C
V
DD
=15V
I
D
=9A
Pulsed
Fig.12 Dynamic Input Characteristics
Switching Time : t [ns]
Gate-Source Voltage : V
GS
[V]
1000
8
6
100
t
d(off)
4
t
d(on)
10
t
r
2
1
0.01
0.1
1
10
0
0
5
10
15
Drain Current : I
D
[A]
Total Gate Charge : Q
g
[nC]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/10
2011.06 - Rev.A
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