MJE5730, MJE5731,
MJE5731A
High Voltage PNP Silicon
Plastic Power Transistors
These devices are designed for line operated audio output amplifier,
SWITCHMODE power supply drivers and other switching
applications.
Features
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•
Popular TO−220 Plastic Package
•
PNP Complements to the TIP47 thru TIP50 Series
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJE5730
MJE5731
MJE5731A
Collector−Base Voltage
MJE5730
MJE5731
MJE5731A
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ T
C
= 25_C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25_C
Derate above 25°C
Unclamped Inducting Load Energy
(See Figure 10)
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
300
350
375
V
CB
300
350
375
V
EB
I
C
I
CM
I
B
P
D
40
0.32
P
D
2.0
0.016
E
T
J
, T
stg
20
−65 to +150
W
W/_C
mJ
_C
W
W/_C
5.0
1.0
3.0
1.0
Vdc
Adc
Adc
Adc
Vdc
Value
Unit
Vdc
1.0 AMPERE
POWER TRANSISTORS
PCP SILICON
300−350−400 VOLTS
50 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MJE573xG
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
3.125
62.5
Unit
_C/W
_C/W
MJE573x = Device Code
x = 0, 1, or 1A
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
August, 2013 − Rev. 7
Publication Order Number:
MJE5730/D
MJE5730, MJE5731, MJE5731A
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
MJE5730
MJE5731
MJE5731A
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
MJE5730
(V
CE
= 250 Vdc, I
B
= 0)
MJE5731
(V
CE
= 300 Vdc, I
B
= 0)
MJE5731A
Collector Cutoff Current
(V
CE
= 300 Vdc, V
BE
= 0)
MJE5730
(V
CE
= 350 Vdc, V
BE
= 0)
MJE5731
(V
CE
= 400 Vdc, V
BE
= 0)
MJE5731A
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 10 Vdc)
(I
C
= 1.0 Adc, V
CE
= 10 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
Base−Emitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 10 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 2.0 MHz)
Small−Signal Current Gain
(I
C
= 0.2 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
f
T
10
h
fe
25
−
−
−
MHz
h
FE
30
10
V
CE(sat)
−
V
BE(on)
−
1.5
1.0
Vdc
150
−
Vdc
−
V
CEO(sus)
300
350
375
I
CEO
−
−
−
I
CES
−
−
−
I
EBO
−
1.0
1.0
1.0
1.0
mAdc
1.0
1.0
1.0
mAdc
−
−
−
mAdc
Vdc
Symbol
Min
Max
Unit
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
200
100
hFE, DC CURRENT GAIN
50
30
20
10
5.0
3.0
2.0
0.02 0.03
T
J
= 150°C
25°C
- 55°C
1.4
1.2
1
0.8
0.6
- 55°C
0.4
0.2
V
CE(sat))
@ I
C
/I
B
= 5.0
0.05
0.1
0.5
0.2 0.3
I
C
, COLLECTOR CURRENT (AMPS)
1.0
2.0
150°C
T
J
= 25°C
V
CE
= 10 V
0.05
0.1
0.2 0.3
0.5
I
C
, COLLECTOR CURRENT (AMPS)
1.0
2.0
0
0.02 0.03
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
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2
MJE5730, MJE5731, MJE5731A
1.4
1.2
0.8
V, VOLTAGE (V)
V
BE(sat)
@ I
C
/I
B
= 5.0
0.8
25°C
0.6
0.4
0.2
0
0.02 0.03
0
150°C
DERATING FACTOR
1.0
T
J
= - 55°C
1.0
SECOND BREAKDOWN
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0.05
0.1
0.2 0.3
0.5
I
C
, COLLECTOR CURRENT (AMPS)
1.0
2.0
0
25
150
50
75
100
125
T
C
, CASE TEMPERATURE (°C)
175
Figure 3. Base−Emitter Voltage
Figure 4. Normalized Power Derating
10
5.0
IC, COLLECTOR CURRENT (AMP)
2.0
1.0
0.5
0.2
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT MJE5730
MJE5731
MJE5732
100
50
200 300
10
20 30
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
T
C
= 25°C
dc
1.0 ms
500
ms
100
ms
0.05
0.02
0.01
5.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
≤
150_C. T
J(pk)
may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Forward Bias Safe Operating Area
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
qJC(t)
= r(t) R
qJC
R
qJC
= 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500
1k
0.01
0.01
0.02
Figure 6. Thermal Response
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3
MJE5730, MJE5731, MJE5731A
TURN-ON PULSE
t
1
V
BE(off)
V
in
AP
PROX.
-11 V
t
2
t
3
51
C
jd
<< C
eb
0V
V
CC
t
1
≤
7.0 ns
100
≤
t
2
< 500
ms
t
3
< 15 ns
R
C
SCOPE
R
B
V
in
APPROX. + 9.0 V
DUTY CYCLE
≈
2.0%
+ 4.0 V
TURN-OFF PULSE
Figure 7. Switching Time Equivalent Circuit
1.0
0.5
0.3
t, TIME (
μ
s)
0.2
0.1
0.05
0.03
0.02
0.01
0.02 0.03
t
d
t
r
T
J
= 25°C
V
CC
= 200 V
I
C
/I
B
= 5.0
t, TIME (
μ
s)
5.0
3.0
2.0
t
f
1.0
0.5
0.3
0.2
0.1
0.05
0.02 0.03
t
s
T
J
= 25°C
V
CC
= 200 V
I
C
/I
B
= 5.0
0.05
0.1
0.2 0.3
0.5
I
C
, COLLECTOR CURRENT (AMPS)
1.0
2.0
0.05
0.1
0.2 0.3
0.5
I
C
, COLLECTOR CURRENT (AMPS)
1.0
2.0
Figure 8. Turn−On Resistive Switching Times
Figure 9. Resistive Turn−Off Switching Times
Test Circuit
V
CE
MONITOR
MJE171
50
INPUT
50
+
V
BB1
= 10 V
-
R
BB2
=
100
W
R
BB1
=
150
W
TUT
+
-
V
BB2
=
0
R
S
=
0.1
W
INPUT
VOLTAGE
100 mH
V
CC
= 20 V
I
C
MONITOR
Voltage and Current Waveforms
t
w
≈
3 ms
(SEE NOTE 1)
0V
-5 V
100 ms
0.63 A
COLLECTOR
CURRENT 0 V
V
CER
COLLECTOR
VOLTAGE
10 V
V
CE(sat)
Figure 10. Inductive Load Switching
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4
MJE5730, MJE5731, MJE5731A
ORDERING INFORMATION
Device
MJE5730G
MJE5731G
MJE5731AG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
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