Si9942DY
Vishay Siliconix
Complimentary 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
r
DS(on)
(W)
0.125 @ V
GS
= 10 V
0.250 @ V
GS
= 4.5 V
0.200 @ V
GS
= –10 V
0.350 @ V
GS
= –4.5 V
I
D
(A)
"3.0
"2.0
"2.5
"2.0
P-Channel
–20
D
1
D
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
S
1
N-Channel MOSFET
D
2
D
2
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
20
"20
"3.0
"2.5
"10
1.6
2.0
1.3
P-Channel
–20
"20
"2.5
"2.0
"10
–1.6
Unit
V
A
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70130
S-000652—Rev. L, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
N- or P-Channel
62.5
Unit
_C/W
1
Si9942DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= –16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= –16 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
On-State Drain Current
b
O S
D i C
I
D(on)
V
DS
v
–5 V, V
GS
= –10 V
V
DS
w
5 V, V
GS
= 4.5 V
V
DS
v
–5 V, V
GS
= –4.5 V
V
GS
= 10 V, I
D
= 1.0 A
Drain-Source On-State Resistance
b
D i S
O S
R i
r
DS(on)
V
GS
= –10 V, I
D
= 1.0 A
V
GS
= 4.5 V, I
D
= 0.5 A
V
GS
= –4.5 V, I
D
= 0.5 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 3.0 A
V
DS
= –15 V, I
D
= –3.0 A
I
S
= 1.25 A, V
GS
= 0 V
I
S
= –1.25 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
–10
A
2
–2
0.07
0.12
0.105
0.22
4.8
S
3.0
0.75
–0.8
1.2
V
–1.2
0.125
0.200
0.250
0.350
W
N-Ch
P-Ch
1.0
V
–1.0
"100
2
–2
25
–25
mA
A
nA
Symbol
Test Condition
Min
Typ
a
Max
Unit
Diode Forward Voltage
b
V
SD
Dynamic
a
N-Ch
Total Gate Charge
Q
g
N-Channel
N Ch
Channel
l
V
DS
= 10 V, V
GS
= 10 V, I
D
= 2.3 A
P-Channel
V
DS
= –10 V V
GS
= –10 V I
D
= –2.3 A
10 V,
10 V,
23
Gate-Drain Charge
Q
gd
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N-Channel
N Ch
l
V
DD
= 20 V, R
L
= 20
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
P-Channel
V
DD
= –20 V R
L
= 20
W
20 V,
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
1
10
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
t
f
P-Ch
N-Ch
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.25 A, di/dt = 100 A/ms
P-Ch
7
6.7
0.75
nC
C
1.3
1.7
1.6
6
10
10
12
17
20
10
10
45
70
15
40
20
40
50
ns
90
50
50
100
100
25
25
Gate-Source Charge
Q
gs
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
www.vishay.com
S
FaxBack 408-970-5600
2
Document Number: 70130
S-000652—Rev. L, 27-Mar-00
Si9942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 10 thru 4 V
8
I
D
– Drain Current (A)
8
125_C
6
6
10
T
C
= –55_C
N CHANNEL
Transfer Characteristics
4
3V
4
2
2V
0
0
2
4
6
8
10
2
25_C
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
600
Capacitance
r
DS(on)
– On-Resistance (
Ω
)
0.16
C – Capacitance (pF)
500
0.12
V
GS
= 4.5 V
400
300
C
iss
200
C
oss
100
C
rss
0.08
V
GS
= 10 V
0.04
0
0
2
4
6
8
10
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
2.0
On-Resistance vs. Junction Temperature
V
GS
– Gate-to-Source Voltage (V)
8
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
V
DS
= 10 V
I
D
= 2.3 A
1.6
V
GS
= 10 V
I
D
= 2 A
6
1.2
4
0.8
2
0.4
0
0
2
4
6
8
0
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
Document Number: 70130
S-000652—Rev. L, 27-Mar-00
T
J
– Junction Temperature (_C)
www.vishay.com
S
FaxBack 408-970-5600
3
Si9942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
T
J
= 150_C
r
DS(on)
– On-Resistance (
Ω
)
I
S
– Source Current (A)
0.50
N CHANNEL
On-Resistance vs. Gate-to-Source Voltage
0.40
T
J
= 25_C
0.30
I
D
= 3 A
0.20
0.10
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.00
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
30
Single Pulse Power
0.2
I
D
= 250
µA
V
GS(th)
Variance (V)
–0.0
Power (W)
25
20
–0.2
15
–0.4
10
–0.6
5
–0.8
–50
0
0
50
T
J
– Temperature (_C)
100
150
0.010
0.100
1
Time (sec)
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
4
Document Number: 70130
S-000652—Rev. L, 27-Mar-00
Si9942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 10 thru 6 V
8
I
D
– Drain Current (A)
I
D
– Drain Current (A)
5V
6
8
10
T
C
= –55_C
25_C
125_C
6
P CHANNEL
Transfer Characteristics
4
4V
2
3V
0
0
2
4
6
8
10
4
2
0
0
1
2
3
4
5
6
7
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1.0
V
GS
= 4.5 V
r
DS(on)
– On-Resistance (
Ω
)
0.8
C – Capacitance (pF)
500
400
C
oss
300
700
600
Capacitance
0.6
0.4
C
iss
200
100
C
rss
0.2
V
GS
= 10 V
0
0
2
4
I
D
– Drain Current (A)
6
8
0
0
5
10
15
20
V
DS
– Drain-to-Source Voltage (V)
10
Gate Charge
2.0
On-Resistance vs. Junction Temperature
V
GS
– Gate-to-Source Voltage (V)
6
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
8
V
DS
=10 V
I
D
= 2.3 A
1.6
V
GS
= 10 V
I
D
= 2.3 A
1.2
4
0.8
2
0.4
0
0
2
4
6
8
0
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 70130
S-000652—Rev. L, 27-Mar-00
www.vishay.com
S
FaxBack 408-970-5600
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
