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and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
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onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf.
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or suitability of its products for any particular purpose, nor does
onsemi
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onsemi.
“Typical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
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does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
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NLSV2T244
2-Bit Dual-Supply
Non-Inverting Level
Translator
The NLSV2T244 is a 2−bit configurable dual−supply voltage level
translator. The input A
n
and output B
n
ports are designed to track two
different power supply rails, V
CCA
and V
CCB
respectively. Both
supply rails are configurable from 0.9 V to 4.5 V allowing universal
low−voltage translation from the input A
n
to the output B
n
port.
Features
8
1
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MARKING
DIAGRAMS
UDFN8
MU SUFFIX
CASE 517AJ
UPM
G
•
•
•
•
•
•
•
•
•
Wide V
CCA
and V
CCB
Operating Range: 0.9 V to 4.5 V
High−Speed w/ Balanced Propagation Delay
Inputs and Outputs have OVT Protection to 4.5 V
Non−preferential V
CCA
and V
CCB
Sequencing
Outputs at 3−State until Active V
CC
is Reached
Power−Off Protection
Outputs Switch to 3−State with V
CCB
at GND
Small Packaging: UDFN8, SO−8, Micro8
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
UP = Specific Device Code
M = Date Code
G
= Pb−Free Package
8
8
1
A
L
Y
W
G
SO−8
D SUFFIX
CASE 751
1
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
8
Micro8
DM SUFFIX
CASE 846A
1
A
Y
W
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
244
AYW
G
G
2T244
ALYW
G
G
Typical Applications
•
Mobile Phones, PDAs, Other Portable Devices
Important Information
•
ESD Protection for All Pins:
HBM (Human Body Model) > 5000 V
1
ORDERING INFORMATION
Device
NLSV2T244MUTAG
NLSV2T244DR2G
NLSV2T244DMR2G
Package
UDFN8
(Pb−Free)
SO−8
(Pb−Free)
Micro8
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
2500 / Tape &
Reel
4000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
March, 2016 − Rev. 4
Publication Order Number:
NLSV2T244/D
NLSV2T244
MAXIMUM RATINGS
Symbol
V
CCA
, V
CCB
V
I
V
C
V
O
DC Supply Voltage
DC Input Voltage
Control Input
DC Output Voltage
(Power Down)
(Active Mode)
(Tri−State Mode)
I
IK
I
OK
I
O
I
CCA
, I
CCB
I
GND
T
STG
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature
A
n
OE
B
n
B
n
B
n
Rating
Value
−0.5 to +5.5
−0.5 to +5.5
−0.5 to +5.5
−0.5 to +5.5
−0.5 to +5.5
−0.5 to +5.5
−20
−50
±50
±100
±100
−65 to +150
V
I
< GND
V
O
< GND
V
CCA
= V
CCB
= 0
Condition
Unit
V
V
V
V
V
V
mA
mA
mA
mA
mA
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CCA
, V
CCB
V
I
V
C
V
IO
Positive DC Supply Voltage
Bus Input Voltage
Control Input
Bus Output Voltage
(Power Down Mode)
(Active Mode)
(Tri−State Mode)
T
A
Dt
/
DV
Operating Temperature Range
Input Transition Rise or Rate
V
I
, from 30% to 70% of V
CC
; V
CC
= 3.3 V
±0.3
V
OE
B
n
B
n
B
n
Parameter
Min
0.9
GND
GND
GND
GND
GND
−40
0
Max
4.5
4.5
4.5
4.5
V
CCB
4.5
+85
10
Unit
V
V
V
V
V
V
°C
nS
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3