Ordering number : ENA2202
NGTG20N60L2TF1G
N-Channel IGBT
600V, 20A, VCE(sat);1.45V Single TO-3PF-3L
Features
•
IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V)
•
IGBT tf=67ns typ.
•
Enhansment type
•
Adaption of full isolation type package
•
Maxium junction temperature Tj=175°C
http://onsemi.com
Applications
•
Power factor correction of white goods appliance
•
General purpose inverter
Specifications
Absolute Maximum Ratings
at Ta = 25°C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current (DC)
Collector Current (Pulse)
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCES
VGES
@ Tc=25°C *2
IC*1
ICP
PD
Tj
Tstg
Limited by Tjmax
@ Tc=100°C *2
Pulse width Limited by Tjmax
Tc=25°C (Our ideal heat dissipation condition) *2
20
105
64
175
- 55 to +175
A
A
W
°C
°C
Conditions
Ratings
600
±20
40
Unit
V
V
A
Note :
*1
Collector Current is calculated from the following formula.
IC(Tc)=
Tjmax - Tc
Rth(j-c)×VCE(sat)(Tj, IC(Tc))
*2
Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ) 7538-001
NGTG20N60L2TF1G
15.5
3.6
4.5
Ordering & Package Information
Device
NGTG20N60L2TF1G
3.0
Package
TO-3PF-3L
SC-94
Shipping
30
pcs. / tube
note
Pb-Free
5.5
10.0
Marking
24.5
Electrical Connection
2
25.0
2.0
2.0
2.0
4.0
0.75
1
2
3
3.3
19.3
5.0
3.5
2.0
0.9
GTG20N
60L2
LOT No.
1
1: Gate
2: Collector
3: Emitter
TO-3PF-3L
3
5.45
5.45
Semiconductor Components Industries, LLC, 2013
September, 2013
90413 TKIM TC-00002943 No.A2202-1/7
NGTG20N60L2TF1G
Electrical Characteristics
at Ta = 25°C, Unless otherwise specified
Ratings
Parameter
Collector to Emitter Breakdown Voltage
Collector to Emitter Cut off Current
Gate to Emitter Leakage Current
Gate to Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-ON Time
Turn-OFF Delay Time
Fall Time
Turn-OFF Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector “Miller” Charge
Symbol
V(BR)CES
ICES
IGES
VGE(th)
VCE (sat)
Cies
Coes
Cres
td(on)
tr
ton
td(off)
tf
toff
Qg
Qge
Qgc
VCE =300V, VGE=15V, IC=20A
VCC=300V,IC=20A
RG=30Ω,L=200μH
VGE=0V/15V
Vclamp=400V
See Fig.1, See Fig.2
VCE =20V,f=1MHz
Conditions
min
IC=500μA, VGE=0V
Tc=25°C
VCE=600V, VGE=0V
VGE=±20V, VCE =0V
VCE =20V, IC=250μA
Tc=25°C
VGE=15V, IC=20A
Tc=150°C
4.5
1.45
1.8
2000
60
50
60
37
400
193
67
281
84
16
37
Tc=150°C
600
10
1
±100
6.5
1.65
typ
max
V
μA
mA
nA
V
V
V
pF
pF
pF
ns
ns
ns
ns
ns
ns
nC
nC
nC
Unit
Thermal Characteristics
at Ta = 25°C, Unless otherwise specified
Parameter
Thermal Resistance (junction- Case)
Thermal Resistance (junction- atmosphere)
Symbol
Rth(j-c)
Rth(j-a)
Conditions
Tc=25°C (our ideal heat dissipation condition)*2
Ratings
2.33
47.5
Unit
°C
/W
°C
/W
Fig.1 Switching Time Test Circuit
Clamp Di
Fig.2 Timing Chart
VGE
90%
0
10%
200μH
DUT
IC
RG
VCC
90%
90%
NGTG20N60L2TF1G
0
VCE
10%
tf
td(off)
toff
10%
10%
tr
td(on)
ton
10%
IT16383
No.A2202-2/7
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