BT131 series
Triacs logic level
Rev. 08 — 9 September 2005
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate triacs in a SOT54 plastic package
1.2 Features
s
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
s
General purpose switching and phase control
1.4 Quick reference data
s
V
DRM
≤
600 V (BT131-600)
s
V
DRM
≤
800 V (BT131-800)
s
I
T(RMS)
≤
1 A
s
I
TSM
≤
12.5 A
2. Pinning information
Table 1:
Pin
1
2
3
Pinning
Description
main terminal 2 (T2)
gate (G)
main terminal 1 (T1)
T2
sym051
Simplified outline
Symbol
T1
G
321
SOT54 (TO-92)
Philips Semiconductors
BT131 series
Triacs logic level
3. Ordering information
Table 2:
Ordering information
Package
Name
BT131-600
BT131-800
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
BT131-600
BT131-800
I
T(RMS)
RMS on-state current
all conduction angles;
T
lead
= 51.2
°C;
see
Figure 1, 4
and
5
half sine wave; T
j
= 25
°C
prior to surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state current
t = 10 ms
I
TM
= 1.5 A; I
G
= 20 mA;
dI
G
/dt = 200 mA/µs
T2+ G+
T2+ G−
T2− G−
T2− G+
I
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
Conditions
Min
-
-
-
Max
600
800
1
Unit
V
V
A
I
TSM
non-repetitive peak on-state
current
-
-
-
12.5
13.8
1.28
A
A
A
2
s
-
-
-
-
-
-
50
50
50
10
2
5
0.1
+150
125
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 3 A/µs.
BT131_SER_8
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 9 September 2005
2 of 12
Philips Semiconductors
BT131 series
Triacs logic level
1.5
P
tot
(W)
1
α
α
003aab038
35
T
lead(max)
(
°C)
65
α
=180°
120°
90°
60°
30°
0.5
95
0
0
0.2
0.4
0.6
0.8
1
I
T(RMS)
(A)
1.2
125
a = form factor = I
T(RMS)
/I
T(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
16
I
TSM
(A)
12
T
T
j
= 25
°C
max
8
I
T
003aab041
I
TSM
t
4
0
1
10
10
2
n
10
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT131_SER_8
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 9 September 2005
3 of 12
Philips Semiconductors
BT131 series
Triacs logic level
10
3
I
T
I
TSM
(A)
003aab040
I
TSM
t
T
T
j
= 25
°C
max
10
2
(
1)
(2)
10
10
−5
10
−4
10
−3
10
−2
t
p
(s)
10
−1
t
p
≤
20 ms
(1) dI
T
/dt limit
(2) T2− G+ quadrant
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
003aab042
3
I
T(RMS)
(A)
1.2
I
T(RMS)
(A)
0.8
51.2
°C
003aab039
2
1
0.4
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
150
T
lead (°C)
f = 50 Hz; T
lead
≤
51.2
°C
(1) T
lead
= 51.2
°C
Fig 4. RMS on-state current as a function of surge
duration, for sinusoidal currents; maximum
values
Fig 5. RMS on-state current as a function of lead
temperature; maximum values
BT131_SER_8
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 9 September 2005
4 of 12
Philips Semiconductors
BT131 series
Triacs logic level
5. Thermal characteristics
Table 4:
Symbol
R
th(j-lead)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
[1]
Typ
-
-
150
Max
60
80
-
Unit
K/W
K/W
K/W
thermal resistance from junction to full cycle
lead
half cycle
thermal resistance from junction to see
Figure 6
ambient
-
[1]
Mounted on a printed-circuit board; lead length = 4 mm
10
2
Z
th(j-lead)
(K/W)
10
(1)
003aab045
1
(2)
P
D
10
−1
t
p
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) half cycle
(2) full cycle
Fig 6. Transient thermal impedance as a function of pulse width
BT131_SER_8
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 9 September 2005
5 of 12
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
