NXP Semiconductors
Technical Data
Document Number: A2T23H200W23S
Rev. 0, 07/2017
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 51 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications requiring very wide instantaneous
bandwidth capability covering the frequency range of 2300 to 2400 MHz.
2300 MHz
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Vdc,
I
DQA
= 500 mA, V
GSB
= 0.5 Vdc, P
out
= 51 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
2300 MHz
2350 MHz
2400 MHz
G
ps
(dB)
15.5
15.6
15.5
D
(%)
50.7
50.6
50.4
Output PAR
(dB)
7.7
7.6
7.4
ACPR
(dBc)
–33.4
–35.2
–35.6
A2T23H200W23SR6
2300–2400 MHz, 51 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Features
Advanced high performance in--package Doherty
Designed for wide instantaneous bandwidth applications
Greater negative gate--source voltage range for improved Class C operation
Able to withstand extremely high output VSWR and broadband operating
conditions
Designed for digital predistortion error correction systems
ACP-
-1230S-
-4L2S
Carrier
RF
inA
/V
GSA
1
(1)
RF
inB
/V
GSB
2
Peaking
(Top View)
6 VBW
A
(2)
5 RF
outA
/V
DSA
4 RF
outB
/V
DSB
3 VBW
B
(2)
Figure 1. Pin Connections
1. Pin connections 4 and 5 are DC coupled
and RF independent.
2. Device cannot operate with V
DD
current
supplied through pin 3 and pin 6.
2017 NXP B.V.
A2T23H200W23SR6
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
–0.5, +65
–6.0, +10
32, +0
–65 to +150
–40 to +150
–40 to +225
Unit
Vdc
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78C, 51 W Avg., W--CDMA, 28 Vdc, I
DQA
= 500 mA,
V
GSB
= 0.5 Vdc, 2350 MHz
Symbol
R
JC
Value
(2,3)
0.29
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
Class
2
C3
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics - Side A, Carrier
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 101
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 500 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.0 Adc)
On Characteristics - Side B, Peaking
-
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 180
Adc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.8 Adc)
1.
2.
3.
4.
V
GS(th)
V
DS(on)
0.8
0.1
1.2
0.15
1.6
0.3
Vdc
Vdc
V
GS(th)
V
GSA(Q)
V
DS(on)
2.1
2.2
0.1
2.5
2.6
0.15
2.9
3.0
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
5
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Side A and Side B are tied together for these measurements.
(continued)
A2T23H200W23SR6
2
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2,3)
(In NXP Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 500 mA, V
GSB
= 0.5 Vdc, P
out
= 51 W Avg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
D
PAR
ACPR
14.0
48.3
7.0
—
15.5
50.7
7.7
–33.4
16.6
—
—
–30.5
dB
%
dB
dBc
Load Mismatch
(3)
(In NXP Doherty Test Fixture, 50 ohm system) I
DQA
= 500 mA, V
GSB
= 0.5 Vdc, f = 2350 MHz, 12
sec(on),
10% Duty
Cycle
VSWR 10:1 at 32 Vdc, 316 W Pulsed CW Output Power
(3 dB Input Overdrive from 158 W Pulsed CW Rated Power)
No Device Degradation
Typical Performance
(3)
(In NXP Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 500 mA, V
GSB
= 0.5 Vdc, 2300–2400 MHz
Bandwidth
P
out
@ 3 dB Compression Point
(4)
AM/PM
(Maximum value measured at the P3dB compression point across
the 2300–2400 MHz bandwidth)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 100 MHz Bandwidth @ P
out
= 51 W Avg.
Gain Variation over Temperature
(–30C to +85C)
Output Power Variation over Temperature
(–30C to +85C)
P3dB
—
—
288
–12
—
—
W
VBW
res
G
F
G
P1dB
—
—
—
—
180
0.3
0.005
0.008
—
—
—
—
MHz
dB
dB/C
dB/C
Table 5. Ordering Information
Device
A2T23H200W23SR6
1.
2.
3.
4.
Tape and Reel Information
R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel
Package
ACP--1230S--4L2S
V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
Part internally matched both on input and output.
Measurements made with device in an asymmetrical Doherty configuration.
P3dB = P
avg
+ 7.0 dB where P
avg
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
A2T23H200W23SR6
RF Device Data
NXP Semiconductors
3
V
GGA
C16
C8
C9
V
DDA
C3
R2
C7
C4
CUT OUT AREA
R1
Z1
P
C2
C1
C
C13
A2T23H200W23S
Rev. 3
C14
C15
D87450
C5
C6
R3
C10
C11
C12
C17
V
GGB
Note: V
DDA
and V
DDB
must be tied together and powered by a single DC power supply.
V
DDB
Figure 2. A2T23H200W23SR6 Test Circuit Component Layout
Table 6. A2T23H200W23SR6 Test Circuit Component Designations and Values
Part
C1, C2, C4, C5, C8, C11, C13, C14
C3, C6, C7, C9, C10, C12
C15
C16, C17
R1
R2, R3
Z1
PCB
Description
6.2 pF Chip Capacitor
10
F
Chip Capacitor
0.6 pF Chip Capacitor
470
F,
63 V Electrolytic Capacitor
50
4 W Chip Resistor
2.7
1/4 W Chip Resistor
2700 MHz Band, 90, 3 dB Hybrid Coupler
Rogers RO4350B, 0.020,
r
= 3.66
Part Number
ATC100B6R2CT500X
C5750X7S2A106M
ATC100B0R6CT500X
MCGPR63V477M13X26--RH
ATCCW12010T0050GBK
CRCW12062R7FKEA
X3C25P1--02S
D87450
Manufacturer
ATC
TDK
ATC
Multicomp
ATC
Vishay
Anaren
MTL
A2T23H200W23SR6
4
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 2300–2400 MHz
D
, DRAIN
EFFICIENCY (%)
–2.2
ACPR (dBc)
–2.3
–2.4
–2.5
–2.6
–2.7
PARC (dB)
ACPR (dBc)
–31
–32
–33
–34
–35
–36
–37
D
DRAIN EFFICIENCY (%)
15.8
15.7
15.6
G
ps
, POWER GAIN (dB)
15.5
15.4
15.3
15.2
15.1
15.0
ACPR
14.9
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
14.8
2290 2305 2320 2335
2350 2365 2380 2395
f, FREQUENCY (MHz)
PARC
G
ps
V
DD
= 28 Vdc, P
out
= 51 W (Avg.), I
DQA
= 500 mA, V
GSB
= 0.5 Vdc
D
53
52
51
50
49
–31
–32
–33
–34
–35
–36
2410
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 51 Watts Avg.
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 26 W (PEP), I
DQA
= 500 mA
V
GSB
= 0.5 Vdc, Two--Tone Measurements
IM3--U
–30
(f1 + f2)/2 = Center Frequency of 2350 MHz
IM3--L
–40
–50
–60
–70
IM5--L
IM5--U
IM7--U
IM7--L
–20
1
10
TWO--TONE SPACING (MHz)
100
200
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
16.0
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
15.5
G
ps
, POWER GAIN (dB)
15.0
14.5
14.0
13.5
13.0
1
0
–1
–2
–3
–4
–1 dB = 30.3 W
PARC
D
ACPR
–2 dB = 46.8 W
–3 dB = 63.7 W
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
30
40
50
60
70
50
45
40
35
V
DD
= 28 Vdc, I
DQA
= 500 mA, V
GSB
= 0.5 Vdc, f = 2350 MHz
G
ps
65
60
55
–5
20
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
A2T23H200W23SR6
RF Device Data
NXP Semiconductors
5
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