电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MV30KP33CATR

产品描述Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小156KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

MV30KP33CATR概述

Trans Voltage Suppressor Diode, 30000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

MV30KP33CATR规格参数

参数名称属性值
是否Rohs认证不符合
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
最大击穿电压40.6 V
最小击穿电压36.7 V
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码O-PALF-W2
JESD-609代码e0
湿度敏感等级1
最大非重复峰值反向功率耗散30000 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散1.61 W
认证状态Not Qualified
参考标准MIL-19500
最大重复峰值反向电压33 V
表面贴装NO
技术AVALANCHE
端子面层TIN LEAD
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
30KP33 thru 30KP400CA, e3
30kW Transient Voltage Suppressor
SCOTTSDALE DIVISION
DESCRIPTION
These Microsemi 30 kW Transient Voltage Suppressors (TVSs) are
designed for applications requiring protection of voltage-sensitive electronic
devices that may be damaged by harsh or severe voltage transients
including lightning per IEC61000-4-5 and class levels with various source
impedances described herein. This series is available in 33 to 400 volt
standoff voltages (V
WM
) in both unidirectional and bi-directional with either
5% or 10% tolerances of the Breakdown Voltage (V
BR
). Microsemi also
offers numerous other TVS products to meet higher or lower power
demands and special applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
Available in both Unidirectional and Bidirectional
construction (Bidirectional with C or CA suffix)
Selections for 33 to 400 volt standoff voltages V
WM
Suppresses transients up to 30 kW @ 10/1000 µs and
200 kW @ 8/20 µs (see Figure 1)
Fast response
Optional 100%
screening for avionics grade
is
available by adding MA prefix to part number for
added 100% temperature cycle -55
o
C to +125
o
C
(10X) as well as surge (3X) and 24 hours HTRB with
post test V
Z
& I
R
(in the operating direction for
unidirectional or both directions for bidirectional)
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers.
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and
IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1,2,3,4: 30KP33A - 30KP400A or CA
Class 5: 30KP33A - 30KP400A or CA (short distance)
Class 5: 30KP33A - 30KP220A or CA (long distance)
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1,2, 3: 30KP33A to 30KP400A or CA
Class 4: 30KP33A to 30KP220A or CA
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: 30KP33A to 30KP400A or CA
Class 3: 30KP33 to 30KP220A or CA
Class 4: 30KP33 to 30KP110A or CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
º
C: 30,000 watts
at 10/1000
μs
(also see Figures 1 and 2)
Impulse repetition rate (duty factor): 0.05%
t
clamping
(0 volts to V
(BR)
min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating & Storage temperature: -65
º
C to +150
º
C
Thermal resistance: 17.5
º
C/W junction to lead, or
77.5
º
C/W junction to ambient when mounted on FR4
PC board with 4 mm
2
copper pads (1oz) and track
width 1 mm, length 25 mm
Steady-State Power dissipation: 7 watts at T
L
=
27.5
o
C, or 1.61 watts at T
A
= 25
º
C when mounted on
FR4 PC board described for thermal resistance
Forward Surge: 250 Amps 8.3 ms half-sine wave for
unidirectional devices only
Solder temperatures: 260
º
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-Lead or RoHS compliant annealed
matte-Tin plating readily solderable per MIL-STD-
750, method 2026
MARKING: Body marked with part number
POLARITY: Band denotes cathode. Bidirectional not
marked for polarity
WEIGHT: 1.7 grams (approximate)
TAPE & REEL option: Standard per EIA-296 for axial
package (add “TR” suffix to part number)
See package dimension on last page
30KP33 - 30KP400CA, e3
Copyright
©
2007
8-21-2007 REV K
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
各位前辈 我用的是NIOS II11.0 现在有点问题想麻烦大家看看 我很是纠结啊
我用的是nios ii11.0版本,现在需要自己创建目标板FLASH编程设计,但是我找不到 nios ii sdk shell这项啊 又没法进行啦 求各位的指导了。...
leizikobe FPGA/CPLD
推荐一篇SAR-ADC工程设计好文章
常被忽略的那80%重点,SAR-ADC 电压基准电路...
hanskying666 模拟与混合信号
晕,这样解释也行啊
为什么男生有很多GF会被羡慕、而女生有很多BF会被鄙视。因为就好像一 把钥匙能开很多锁、被称为万能钥匙、而一把锁能被很多钥匙打开说明锁有问题。...
小娜 聊聊、笑笑、闹闹
请教,vs2005无法显示安装的SDK
我的VS2005是TEAM EDITION,我用PLATFORM生成了一个SDK(***.MSI),无论是默认安装还是安装到VS2005的SMARTDEVICE/SDK目录下面,我都无法在VC++的智能应用程序设备里面看到WINCE5.0 请教这个应该如 ......
chenquan 嵌入式系统
单片机初学者,请问几个基本的问题,感谢~
我现在用的是MPLAB IDE C18编译器,芯片采用的是PIC18F4620,请问: 1、我要在程序中判断RB0引脚是高电平还是低电平,应该怎么引用? 2、如果要给RC0-RC7赋值,一次性赋值,又该怎么引用? ...
bjyq 嵌入式系统
恩智浦GreenChip电源IC系列确立低负载下效率和空载待机功耗的新标准
本帖最后由 jameswangsynnex 于 2015-3-3 19:58 编辑 GreenChip SPR TEA1716是业内首款达到EuP Lot 6要求的组合PFC和LLC的转换器 ...
Semiconductors 消费电子

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2807  2851  2469  270  2176  8  28  21  12  7 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved