BC856A SERIES
Taiwan Semiconductor
Small Signal Product
200mW, PNP Small Signal Transistor
FEATURES
-
Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin(Sn) lead finish with Nickel(Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case : SOT- 23 small outline plastic package
- Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight : 0.008 grams (approximately)
SOT-23
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
PARAMETER
Power Dissipation
BC856
Collector-Base Voltage
BC857
BC858
BC856
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction and Storage Temperature Range
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
BC856
Collector Cut-off Current
Emitter Cut-off Current
BC856A, BC857A, BC858A
DC Current Gain
BC856B, BC857B, BC858B
BC857C, BC858C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
V
CE
= -5V
I
C
= -100mA
I
C
= -100mA
I
C
= -10mA
I
B
= -5mA
I
B
= -5mA
f= 100MHz
V
CE(sat)
V
BE(sat)
f
T
V
CE
= -5V
I
C
= -2mA
h
FE
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
I
E
= -1μA
V
CB
= -70V
V
CB
= -45V
V
CB
= -25V
V
EB
= -5V
I
C
=0
I
EBO
I
E
= 0
I
CBO
I
C
= 0
V
(BR)EBO
I
C
= -10mA
I
B
= 0
V
(BR)CEO
I
C
= -10μA
I
E
= 0
V
(BR)CBO
BC857
BC858
V
EBO
I
C
T
J
, T
STG
SYMBOL
MIN
-80
-50
-30
-65
-45
-30
-5
-
-
-
-
125
220
420
-
-
100
V
CEO
V
CBO
SYMBOL
P
D
VALUE
200
-80
-50
-30
-65
-45
-30
-5
-0.1
-55 to + 150
MAX
-
-
-
-
V
V
A
°C
UNIT
V
V
UNIT
mW
-
-
-
-100
-100
-100
-0.1
250
475
800
-0.65
-1.1
-
V
V
nA
μA
V
V
MHz
Version : H1606
BC856A SERIES
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTIC CURVES
(TA=25°C unless otherwise noted)
Fig. 1 Static Characteristic
50
45
I
C
[mA], Collector Current
40
I
B
= -400μA
I
B
= -350μA
h
FE,
DC Current Gain
I
B
= -300μA
I
B
= -250μA
I
B
=- 200μA
I
B
= -150μA
I
B
= -100μA
I
B
= -50μA
1000
Fig. 2 DC Current Gain
V
CE
= - 5V
35
30
25
20
15
100
10
5
0
10
0
2
4
6
8
10
12
14
16
18
20
-0.1
-1.0
-10.0
-100.0
1
2
3
4
V
CE
[V], Collector-Emitter Voltage
I
C
[mA], Collector Current
Fig.3 Base-Emitter Saturation Voltage
VS.Collector-Emitter Saturation
10
V
BE(sat),
V
CE(sat)
[V], Saturation Voltage
-100.
Fig. 4 Base-Emitter On Voltage
I
C
= 10 I
B
I
C
[mA], Collector Current
V
CE
= - 5V
5
1
V
BE
(sat)
-10.
1
-1.
V
CE
(sat)
0.1
0.01
-0.
0.1
1
10
100
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], Collector Current
V
BE
[V], Base-Emitter Voltage
Fig.5 Collector Output Capacitance
100
Fig. 6 Current Gain Bandwidth Product
1000
f=1MHz I
E
=0
C
ob
[pF], Capacitance
f
T
[MHz], Current Gain-Bandwidth Product
f=1MHz I
E
=0
100
10
10
1
-1.
-10.
-100.
-1000.
1
-0.
-1.
-10.
-100.
I
C
[mA], Collector Current
V
CB
[V], Collector-Base Voltage
Version : H1606
BC856A SERIES
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTIC CURVES
(TA=25°C unless otherwise noted)
Fig. 7 DC Current Gain as a Function of
Collector Current; Typical Values
h
FE
- I
C
1200
BC857A: VCE=5V
V
BE
1000
Fig. 8 Base-Emitter Voltage as a Function of
Collector Current; Typical Values
V
BE
- I
C
500
h
FE
450
400
BC857A: VCE=-5V
Ta=55
O
C
350
300
250
200
150
Ta=25
O
C
Ta=150
O
C
800
600
Ta=55
O
C
400
200
Ta=25
O
C
1
100
50
Ta=150
O
C
2
1
10
100
1000
0
0.01
0.1
1
10
100
1000
-I
C
(mA)
0
0.01
0.1
3
-I
C
(mA)
4
5
1
Version : H1606
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