ASB0130
SMD Schottky Barrier Diode
Features
I
O
=
100mA
V
R
=
30V
-
Designed for mounting on small surface.
- Extremely thin package.
- Low drop-down voltage.
- Majority carrier conduction.
- Lead-free device
0.010(0.25)Typ.
0.033(0.85)
0.028(0.70)
General Description
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.012(0.30)Typ.
0.014(0.35)Typ.
Dimensions in inches and (millimeter)
P
+
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
Mechanical Data
- Case :0603(1608) 1005(2512) standard package,
molded plastic.
- Terminals : Gold plated, solderable per
MIL-STD-750, method 2026.
- Polarity : Indicated by cathode band.
- Mounting position : Any.
-
Weight : BD:0.003gram (approximately)
0.014(0.35)Typ.
0.014(0.35)Typ.
0.035(0.90)
0.027(0.70)
0.012(0.30)Typ.
Dimensions in inches and (millimeter)
BF:0.006gram (approximately)
Ordering information
A
XX
XX XX XX
Feature
SB : Schottky Barrier
lo
Vo
Package type
BD-0603
BF-1005
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Aug 2, 2004
1/3
ASB0130
SMD Schottky Barrier Diode
Maximum Rating
(at T
A
=25ºC unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
RRM
V
R
I
O
I
FSM
P
D
T
STG
T
j
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current,
surge peak
Power Dissipation
Storage temperature
Junction temperature
0603
1005
0603
1005
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
-
-
-
-
-
-
-
-40
-40
-
-
-
1000
1000
-
-
-
-
35
30
100
-
-
150
250
+125
+125
V
V
mA
mA
mW
ºC
ºC
Electrical Characteristics
(at T
A
=25ºC unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
F
I
R
C
T
Forward voltage
Reverse current
Capacitance between
terminals
I
F
=100mADC
V
R
=30V
F=1MHz, and 10 VDC reverse
voltage
-
-
-
-
-
9
0.44
30
-
V
µA
pF
Anachip Corp.
www.anachip.com.tw
2/3
Rev. 1.0 Aug 2, 2004
ASB0130
SMD Schottky Barrier Diode
Rating And Characteristic Curves
125 C
75 C
25 C
-25 C
f = 1 MHz
Ta = 25 C
Ambient temperature ( C )
Marking Information
B3
ASB0130
Anachip Corp.
www.anachip.com.tw
3/3
Rev. 1.0 Aug 2, 2004
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