Nibble Mode DRAM, 32MX1, 70ns, CMOS, PDSO24,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | FUJITSU(富士通) |
| 零件包装代码 | TSOP2 |
| 包装说明 | TSSOP, TSSOP24/28,.46,20 |
| 针数 | 28/24 |
| Reach Compliance Code | compliant |
| 最长访问时间 | 70 ns |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-PDSO-G24 |
| JESD-609代码 | e0 |
| 内存密度 | 33554432 bit |
| 内存集成电路类型 | NIBBLE MODE DRAM |
| 内存宽度 | 1 |
| 端子数量 | 24 |
| 字数 | 33554432 words |
| 字数代码 | 32000000 |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 32MX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSSOP |
| 封装等效代码 | TSSOP24/28,.46,20 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 最大待机电流 | 0.002 A |
| 最大压摆率 | 0.18 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING |
| 端子节距 | 0.5 mm |
| 端子位置 | DUAL |
| Base Number Matches | 1 |
| MBS8132101-70PFTN | MBS8132101-70PJ | MBS8132101-70PFTR | MBS8132101-60PFTN | MBS8132101-80PFTR | |
|---|---|---|---|---|---|
| 描述 | Nibble Mode DRAM, 32MX1, 70ns, CMOS, PDSO24, | Nibble Mode DRAM, 32MX1, 70ns, CMOS, PDSO24, | Nibble Mode DRAM, 32MX1, 70ns, CMOS, PDSO24, | Nibble Mode DRAM, 32MX1, 60ns, CMOS, PDSO24, | Nibble Mode DRAM, 32MX1, 80ns, CMOS, PDSO24, |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | TSOP2 | SOJ | TSOP2 | TSOP2 | TSOP2 |
| 包装说明 | TSSOP, TSSOP24/28,.46,20 | SOJ, SOJ24/28,.44 | TSSOP, TSSOP24/28,.46,20 | TSSOP, TSSOP24/28,.46,20 | TSSOP, TSSOP24/28,.46,20 |
| 针数 | 28/24 | 24 | 28/24 | 28/24 | 28/24 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
| 最长访问时间 | 70 ns | 70 ns | 70 ns | 60 ns | 80 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-PDSO-G24 | R-PDSO-J24 | R-PDSO-G24 | R-PDSO-G24 | R-PDSO-G24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit |
| 内存集成电路类型 | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM | NIBBLE MODE DRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 33554432 words | 33554432 words | 33554432 words | 33554432 words | 33554432 words |
| 字数代码 | 32000000 | 32000000 | 32000000 | 32000000 | 32000000 |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 32MX1 | 32MX1 | 32MX1 | 32MX1 | 32MX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TSSOP | SOJ | TSSOP | TSSOP | TSSOP |
| 封装等效代码 | TSSOP24/28,.46,20 | SOJ24/28,.44 | TSSOP24/28,.46,20 | TSSOP24/28,.46,20 | TSSOP24/28,.46,20 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 |
| 最大待机电流 | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A |
| 最大压摆率 | 0.18 mA | 0.18 mA | 0.18 mA | 0.2 mA | 0.16 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | GULL WING | J BEND | GULL WING | GULL WING | GULL WING |
| 端子节距 | 0.5 mm | 1.27 mm | 0.5 mm | 0.5 mm | 0.5 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 厂商名称 | FUJITSU(富士通) | FUJITSU(富士通) | FUJITSU(富士通) | - | FUJITSU(富士通) |
| Base Number Matches | 1 | 1 | 1 | 1 | - |
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