SB-28, Tube
| 参数名称 | 属性值 |
| Brand Name | Integrated Device Technology |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | SB |
| 包装说明 | DIP-28 |
| 针数 | 28 |
| 制造商包装代码 | SB28 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 最长访问时间 | 40 ns |
| 其他特性 | RETRANSMIT |
| 最大时钟频率 (fCLK) | 20 MHz |
| 周期时间 | 50 ns |
| JESD-30 代码 | R-CDIP-T28 |
| JESD-609代码 | e0 |
| 内存密度 | 36864 bit |
| 内存集成电路类型 | OTHER FIFO |
| 内存宽度 | 9 |
| 湿度敏感等级 | 1 |
| 功能数量 | 1 |
| 端子数量 | 28 |
| 字数 | 4096 words |
| 字数代码 | 4000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 4KX9 |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL/SERIAL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B |
| 最大待机电流 | 0.004 A |
| 最大压摆率 | 0.16 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| Base Number Matches | 1 |
| 72142L40CB | 72142L40P | 72132L40P | 72132L40CB | 72132L50PDGI | 72132L50CB | 72142L50CB | |
|---|---|---|---|---|---|---|---|
| 描述 | SB-28, Tube | FIFO, 4KX9, 40ns, Asynchronous, CMOS, PDIP28 | FIFO, 2KX9, 40ns, Asynchronous, CMOS, PDIP28 | SB-28, Tube | PDIP-28, Tube | SB-28, Tube | FIFO, 4KX9, 50ns, Asynchronous, CMOS, CDIP28 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 不含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 包装说明 | DIP-28 | DIP-28 | DIP-28 | DIP-28 | , | DIP-28 | DIP-28 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e3 | e0 | e0 |
| 峰值回流温度（摄氏度） | 260 | 225 | 225 | 260 | 260 | 260 | 260 |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn/Pb) | MATTE TIN | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | 30 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 6 |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Brand Name | Integrated Device Technology | - | - | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology | - |
| 零件包装代码 | SB | - | - | SB | PDIP | SB | - |
| 针数 | 28 | - | - | 28 | 28 | 28 | - |
| 制造商包装代码 | SB28 | - | - | SB28 | PDG28 | SB28 | - |
| 最长访问时间 | 40 ns | 40 ns | 40 ns | 40 ns | - | 50 ns | 50 ns |
| 其他特性 | RETRANSMIT | RETRANSMIT | RETRANSMIT | RETRANSMIT | - | RETRANSMIT | RETRANSMIT |
| 最大时钟频率 (fCLK) | 20 MHz | 20 MHz | 20 MHz | 20 MHz | - | 15 MHz | 15 MHz |
| 周期时间 | 50 ns | 50 ns | 50 ns | 50 ns | - | 65 ns | 65 ns |
| JESD-30 代码 | R-CDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-CDIP-T28 | - | R-CDIP-T28 | R-CDIP-T28 |
| 内存密度 | 36864 bit | 36864 bit | 18432 bit | 18432 bit | - | 18432 bit | 18432 bit |
| 内存集成电路类型 | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | - | OTHER FIFO | OTHER FIFO |
| 内存宽度 | 9 | 9 | 9 | 9 | - | 9 | 9 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | 1 | - |
| 功能数量 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | - | 28 | 28 |
| 字数 | 4096 words | 4096 words | 2048 words | 2048 words | - | 2048 words | 2048 words |
| 字数代码 | 4000 | 4000 | 2000 | 2000 | - | 2000 | 2000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 70 °C | 70 °C | 125 °C | - | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | - | - | -55 °C | - | -55 °C | -55 °C |
| 组织 | 4KX9 | 4KX9 | 2KX9 | 2KX9 | - | 2KX9 | 2KX9 |
| 可输出 | YES | YES | YES | YES | - | YES | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | DIP | DIP | - | DIP | DIP |
| 封装等效代码 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | - | DIP28,.6 | DIP28,.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | - | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL/SERIAL | PARALLEL/SERIAL | PARALLEL/SERIAL | PARALLEL/SERIAL | - | PARALLEL/SERIAL | PARALLEL/SERIAL |
| 电源 | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B | - | - | MIL-STD-883 Class B | - | MIL-STD-883 Class B | MIL-STD-883 Class B |
| 最大待机电流 | 0.004 A | 0.002 A | 0.002 A | 0.004 A | - | 0.004 A | 0.004 A |
| 最大压摆率 | 0.16 mA | 0.14 mA | 0.14 mA | 0.16 mA | - | 0.16 mA | 0.16 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | - | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | - | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | - | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | - | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | - | CMOS | CMOS |
| 温度等级 | MILITARY | COMMERCIAL | COMMERCIAL | MILITARY | - | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | - | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | - | DUAL | DUAL |
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