Data Sheet No. 1.037
Series PVT422
HEXFET POWER MOSFET PHOTOVOLTAIC RELAY
®
Microelectronic
Power IC Relay
Dual Pole, Normally Open
0-400V, 120mA AC/DC
General Description
The PVT422 Series Photovoltaic Relay is a
dual-pole, normally open solid-state relay that can
replace electromechanical relays in many
applications. It utilizes International Rectifier’s
HEXFET power MOSFET as the output switch,
driven by an integrated circuit photovoltaic
generator of novel construction. The output switch
is controlled by radiation from a GaAlAs light
emitting diode (LED) which is optically isolated
from the photovoltaic generator.
Series PVT422 Relays are packaged in an 8-
pin, molded DIP package with either thru-hole or
“gull-wing” surface mount terminals. It is available
in standard plastic shipping tubes or on tape-and-
reel. Refer to Part Identification information.
PVT422 Features
HEXFET Power MOSFET output
s
Bounce-free operation
s
4,000 V
RMS
I/O isolation
s
Linear AC/DC operation
s
Solid-State reliability
s
UL recognition and CSA certification pending
s
Applications
On/Off Hook switch
Dial-Out relay
Ring injection relay
General switching
s
s
s
s
Part Identification
PVT422
PVT422S
PVT422S-T
thru-hole
SMT
SMT, T&R
(HEXFET is the registered trademark for International Rectifier Power MOSFETs)
S
ECOND-
G
ENERATION
P
HOTOVOLTAIC
R
ELAYS
A-19
I
NTERNATIONAL
R
ECTIFIER
Series PVT422
Electrical Specifications
(-40°C
≤
T
A
≤
+85°C unless otherwise specified)
INPUT CHARACTERISTICS
Min. Control Current (See Fig.1)
Max. Control Current for Off-State Resistance @TA=+25°C
Control Current Range (Caution: current limit input LED, see Fig.5)
Max. Reverse Voltage
Limits
2.0
0.4
2.0 to 25
7.0
Units
mA
mA
mA
V
OUTPUT CHARACTERISTICS
Operating Voltage Range
Max. Load Current @ T
A
=+40°C
5mA Control (See Fig.1) (single and dual channel operation)
Max. Peak Load Current (10ms max. duration)
(single and dual channel operation)
Max. On-State Resistance @T
A
=+25°C
For 50mA Pulsed Load, 5mA Control (See Fig.3)
Max. Off-State Leakage @T
A
=+25°C, ±320V (See Fig.4)
Max. Turn-On Time @T
A
=+25°C (See Fig. 6)
For 50mA, 100 V
DC
Load, 5mA Control
Max. Turn-Off Time @T
A
=+25°C (See Fig. 6)
For 50mA, 100 V
DC
Load, 5mA Control
Max. Output Capacitance @ 50V
DC
Limits
0 to ±400
120
350
35
1.0
2.0
2.0
12
Units
V
(DC or AC peak)
mA
mA
Ω
µA
ms
ms
pF
GENERAL CHARACTERISTICS
Min. Dielectric Strength, Input-Output
Min. Dielectric Strength, Pole-to-Pole
Min. Insulation Resistance, Input-Output
@T
A
=+25°C, 50%RH, 100V
DC
Max. Capacitance, Input-Output
Max. Pin Soldering Temperature (10 seconds max.)
Ambient Temperature Range: Operating
Storage
Limits
4000
1000
10
12
1.0
+260
-40 to +85
-40 to +100
Units
V
RMS
V
DC
Ω
pF
°C
Connection Diagram
A-20
S
ECOND-
G
ENERATION
P
HOTOVOLTAIC
R
ELAYS
I
NTERNATIONAL
R
ECTIFIER
Series PVT422
S
ECOND-
G
ENERATION
P
HOTOVOLTAIC
R
ELAYS
A-21
I
NTERNATIONAL
R
ECTIFIER
Series PVT422
Mechanical Specifications
(Dimensions in millimeters (inches))
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982
2. CONTROLLING DIMENSION: INCH
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD
PROTRUSIONS SHALL NOT EXCEED 0.25 (.010).
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 713215
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: ++ 65 221 8371
Data and specifications subject to change without notice.
9/95
Microchip MCU
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