VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
• AEC-Q101 qualified
• Peak wavelength:
p
= 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
= ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Package matches with detector VEMD2xx3SSLX01 and
VEMT2xx3SLX01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
VSMF2893SLX01 is an infrared, 890 nm, side looking
emitting diode in GaAlAs (DH) technology with high radiant
power and high speed, molded in clear, untinted plastic
package (with lens) for surface mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• 3D TV
• IR touch panels
• Miniature light barrier
• Photointerrupters
• Optical switch
• Shaft encoders
• IR emitter source for proximity applications
PRODUCT SUMMARY
COMPONENT
VSMF2893SLX01
I
e
(mW/sr)
20
(deg)
± 25
p
(nm)
890
t
r
(ns)
30
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
VSMF2893SLX01
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
REMARKS
MOQ: 3000 pcs, 3000 pcs/reel
PACKAGE FORM
Side view
Rev. 1.0, 26-Feb-13
Document Number: 83483
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
½
100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
Acc. figure 9, J-STD-020
J-STD-051, leads 7 mm,
soldered on PCB
T
sd
R
thJA
VALUE
5
100
200
1
160
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
180
120
100
80
60
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70 80
90
100
21344
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
R
thJA
= 250 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
21343
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERSITICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
p
Rise time
Fall time
Cut-off frequency
I
F
= 30 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
TK
VF
I
R
C
J
I
e
I
e
e
TK
e
p
TK
p
t
r
t
f
f
c
870
10
125
20
180
40
- 0.35
± 25
890
40
0.25
30
30
12
910
30
MIN.
1.25
TYP.
1.4
2.3
- 1.8
- 1.1
10
MAX.
1.6
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
Rev. 1.0, 26-Feb-13
Document Number: 83483
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMF2893SLX01
www.vishay.com
BASIC CHARACTERSITICS
(T
amb
= 25 °C, unless otherwise specified)
Vishay Semiconductors
1000
1.25
Φ
e rel
- Relative Radiant Power
I
F
- Forward Current (mA)
1.0
100
0.75
t
p
= 100 µs
10
t
p
/T = 0.001
0.5
0.25
1
0
18873_1
1
2
3
4
20082
0
800
900
1000
V
F
- Forward Voltage (V)
λ
- Wavelength (nm)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Radiant Power vs. Wavelength
V
F, rel
- Relative Forward Voltage (%)
110
0°
I
e rel
- Relative Radiant Intensity
10°
20°
30°
ϕ
- Angular Displacement
108
106
104
102
100
98
96
94
92
90
- 40
- 20
0
20
40
60
80
100
I
F
= 1 mA
t
p
= 20 ms
I
F
= 100 mA
I
F
= 10 mA
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
21443
T
amb
- Ambient Temperature (°C)
22694
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
1000
1000
t
p
/T = 0.01
0.02
T
amb
< 50 °C
I
e
- Radiant Intensity (mW/sr)
I
F
- Forward Current (mA)
t
p
= 100 µs
100
0.05
0.1
10
0.2
0.5
100
0.01
1
0.1
0.001
0.1
1
10
100
0.01
0.1
1
I
F
- Forward Current (A)
16031
t
p
- Pulse Duration (ms)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Pulse Forward Current vs. Pulse Duration
Rev. 1.0, 26-Feb-13
Document Number: 83483
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMF2893SLX01
www.vishay.com
SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
Vishay Semiconductors
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
Time (s)
19841
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS
in millimeters:
VSMF2893SLX01
Rev. 1.0, 26-Feb-13
Document Number: 83483
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMF2893SLX01
www.vishay.com
TAPING AND REEL DIMENSIONS
in millimeters:
VSMF2893SLX01
Vishay Semiconductors
Rev. 1.0, 26-Feb-13
Document Number: 83483
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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