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TAN150: 产品描述150 watts, 50 volts, pulsed avionics 960 - 1215 mhz; 文件大小169KB，共2页; 制造商ETC

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TAN150概述

150 watts, 50 volts, pulsed avionics 960 - 1215 mhz

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TAN150

150 Watts, 50 Volts, Pulsed

Avionics 960 - 1215 MHz

GENERAL DESCRIPTION

The TAN150 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 960-1215 MHz. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. The transistor includes input and output prematch for

broadband capability. Low thermal resistance package reduces junction

temperature, extends life.

CASE OUTLINE

55AW, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25

Maximum Voltage and Current

BVces

Collector to Base Voltage

BVebo Emitter to Base Voltage

Collector Current

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

583 Watts

55 Volts

3.5 Volts

15 Amps

- 65 to + 150

+ 200

ELECTRICAL CHARACTERISTICS @ 25

SYMBOL

Pout

VSWR

BVebo

BVces

CHARACTERISTICS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC - Current Gain

Thermal Resistance

TEST CONDITIONS

F = 960-1215 MHz

Vcc = 50 Volts

PW = 20

µsec

DF = 5%

F = 1090 MHz

Ie = 10 mA

Ic = 50 mA

I c= 50 mA, Vce = 5 V

MIN

150

7.0

10:1

3.5

0.3

Volts

TYP

MAX

UNITS

Watts

θjc

C/W

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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