TB0640M - TB3500M
50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE
PROTECTIVE DEVICE
Features
UNDER DEVELOPMENT
NEW PRODUCT
·
·
·
·
·
·
50A Peak Pulse Current @ 10/1000ms
250A Peak Pulse Current @ 8/20ms
58 - 320V Stand-Off Voltages
Oxide-Glass Passivated Junction
Bi-Directional Protection In a Single Device
High Off-State impedance and Low On-State
Voltage
B
A
Dim
A
SMB
Min
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
Max
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
Mechanical Data
·
·
·
·
·
·
·
·
Case: SMB, Molded Plastic
Plastic Material: UL Flammability
Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
Weight: 0.093 grams (approx.)
Marking: Date Code and Marking Code (See Page 4)
Ordering Information: See Page 4
C
B
C
D
D
G
E
F
G
H
H
F
E
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Non-Repetitive Peak Impulse Current
Non-Repetitive Peak On-State Current
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Typical Positive Temperature Coefficient for Breakdown Voltage
@10/1000us
@8.3ms (one-half cycle)
Symbol
I
pp
I
TSM
T
j
T
STG
R
qJL
R
qJA
DVBR/DT
j
Value
50
30
-40 to +150
-55 to +150
20
100
0.1
Unit
A
A
°C
°C
°C/W
°C/W
%/°C
Maximum Rated Surge Waveform
Waveform
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T, K20/K21
FCC Part 68
GR-1089-CORE
Ipp (A)
300
250
150
100
75
50
0
I
PP
, PEAK PULSE CURRENT (%)
100
Peak Value (I
pp
)
t
r
= rise time to peak value
t
p
= decay time to half value
Half Value
50
0
t
r
t
p
TIME
DS30361 Rev. 2 - 1
1 of 4
TB0640M - TB3500M
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
On-State
Voltage
@ I
T
= 1A
V
T
(V)
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
NEW PRODUCT
Part Number
Rated
Repetitive
Off-State
Voltage
V
DRM
(V)
Off-State
Leakage
Current @
V
DRM
I
DRM
(uA)
5
5
5
5
5
5
5
5
5
5
5
Breakover
Voltage
V
BO
(V)
77
88
98
130
160
180
220
265
300
350
400
Breakover
Current
I
BO
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
Holding Current
I
H
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max (mA)
800
800
800
800
800
800
800
800
800
800
800
Off-State
Capacitance
C
O
(pF)
140
140
140
90
90
90
90
60
60
60
60
Marking Code
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
58
65
75
90
120
140
160
190
220
275
320
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
Notes:
Stand-off Voltage
Parameter
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
NOTE: 2
NOTE: 1
1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
I
I
PP
I
BO
I
H
I
BR
I
DRM
V
T
V
DRM
V
BR
V
BO
V
UNDER DEVELOPMENT
DS30361 Rev. 2 - 1
2 of 4
TB0640M - TB3500M
100
NORMALIZED BREAKDOWN VOLTAGE
1.2
NEW PRODUCT
I
(DRM)
, OFF-STATE CURRENT (uA)
1.15
V
BR
= (T
J
)
V
BR
= (T
J
= 25°C)
10
1.1
1
1.05
0.1
V
DRM
= 50V
1
0.01
0.95
0.001
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 1 Off-State Current vs. Junction Temperature
0.9
-50
-25
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
1.1
NORMALIZED BREAKDOWN VOLTAGE
100
1.05
V
BO
= (T
J
= 25°C)
I
T
, ON-STATE CURRENT (A)
V
BO
= (T
J
)
10
1
T
j
= 25°C
0.95
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (ºC)
J
Fig. 3 Relative Variation of Breakover Voltage
vs. Junction Temperature
1
1
1.5
2
2.5
3
3.5
4
4.5
5
V
T
, ON-STATE VOLTAGE (V)
Fig. 4 On-State Current vs. On-State Voltage
1
1.4
1.3
NORMALIZED HOLDING CURRENT
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-50
-25
0
25
50
75
100
125
I
H
= (T
J
)
I
H
= (T
J
= 25°C)
NORMALIZED CAPACITANCE
C
O
= (V
R
)
C
O
= (V
R
= 1V)
T
j
= 25°C
f = 1 Mhz
V
RMS
= 1V
0.1
1
10
100
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
V
R
, REVERSE VOLTAGE (V)
Fig. 6 Relative Variation of Junction Capacitance
vs. Reverse Voltage Bias
UNDER DEVELOPMENT
DS30361 Rev. 2 - 1
3 of 4
TB0640M - TB3500M
微控制器 MCU
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