9A high-speed mosfet drivers
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | TelCom Semiconductor, Inc. (Microchip Technology) |
| 包装说明 | DIP, DIP8,.3 |
| Reach Compliance Code | unknown |
| 高边驱动器 | NO |
| 输入特性 | SCHMITT TRIGGER |
| 接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码 | R-PDIP-T8 |
| JESD-609代码 | e0 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 输出特性 | TOTEM-POLE |
| 标称输出峰值电流 | 9 A |
| 输出极性 | INVERTED |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装等效代码 | DIP8,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 4.5/18 V |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 断开时间 | 0.08 µs |
| 接通时间 | 0.08 µs |
| TC4421EPA | TC4422CPA | TC4422MJA | TC4422 | TC4421MJA | |
|---|---|---|---|---|---|
| 描述 | 9A high-speed mosfet drivers | 9A high-speed mosfet drivers | 9A high-speed mosfet drivers | 9A high-speed mosfet drivers | 9A high-speed mosfet drivers |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | - | 不符合 |
| 厂商名称 | TelCom Semiconductor, Inc. (Microchip Technology) | TelCom Semiconductor, Inc. (Microchip Technology) | TelCom Semiconductor, Inc. (Microchip Technology) | - | TelCom Semiconductor, Inc. (Microchip Technology) |
| 包装说明 | DIP, DIP8,.3 | DIP, DIP8,.3 | DIP, DIP8,.3 | - | DIP, DIP8,.3 |
| Reach Compliance Code | unknown | unknown | unknown | - | unknown |
| 高边驱动器 | NO | NO | NO | - | NO |
| 输入特性 | SCHMITT TRIGGER | SCHMITT TRIGGER | SCHMITT TRIGGER | - | SCHMITT TRIGGER |
| 接口集成电路类型 | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | BUFFER OR INVERTER BASED MOSFET DRIVER | - | BUFFER OR INVERTER BASED MOSFET DRIVER |
| JESD-30 代码 | R-PDIP-T8 | R-PDIP-T8 | R-GDIP-T8 | - | R-GDIP-T8 |
| JESD-609代码 | e0 | e0 | e0 | - | e0 |
| 功能数量 | 1 | 1 | 1 | - | 1 |
| 端子数量 | 8 | 8 | 8 | - | 8 |
| 最高工作温度 | 85 °C | 70 °C | 125 °C | - | 125 °C |
| 最低工作温度 | -40 °C | - | -55 °C | - | -55 °C |
| 输出特性 | TOTEM-POLE | TOTEM-POLE | TOTEM-POLE | - | TOTEM-POLE |
| 标称输出峰值电流 | 9 A | 9 A | 9 A | - | 9 A |
| 输出极性 | INVERTED | TRUE | TRUE | - | INVERTED |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | - | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DIP | - | DIP |
| 封装等效代码 | DIP8,.3 | DIP8,.3 | DIP8,.3 | - | DIP8,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | - | IN-LINE |
| 电源 | 4.5/18 V | 4.5/18 V | 4.5/18 V | - | 4.5/18 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified |
| 表面贴装 | NO | NO | NO | - | NO |
| 技术 | CMOS | CMOS | CMOS | - | CMOS |
| 温度等级 | INDUSTRIAL | COMMERCIAL | MILITARY | - | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | - | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | - | DUAL |
| 断开时间 | 0.08 µs | 0.08 µs | 0.08 µs | - | 0.08 µs |
| 接通时间 | 0.08 µs | 0.08 µs | 0.08 µs | - | 0.08 µs |
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