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FM25VN10-G

产品描述F-ram 1M (128kx8) 2.0-3.6V w/unique ser number
产品类别存储    存储   
文件大小324KB,共16页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM25VN10-G概述

F-ram 1M (128kx8) 2.0-3.6V w/unique ser number

FM25VN10-G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
内存密度1048576 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
电源2.5/3.3 V
认证状态Not Qualified
座面最大高度1.75 mm
最大待机电流0.00015 A
最大压摆率0.003 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层MATTE TIN
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度3.9 mm
Base Number Matches1

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Pre-Production
FM25V10
1Mb Serial 3V F-RAM Memory
Features
1M bit Ferroelectric Nonvolatile RAM
Organized as 131,072 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 40 MHz Frequency
Direct Hardware Replacement for Serial Flash
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Device ID and Serial Number
Device ID reads out Manufacturer ID & Part ID
Unique Serial Number (FM25VN10)
Low Voltage, Low Power
Low Voltage Operation 2.0V – 3.6V
90
µA
Standby Current (typ.)
5
µA
Sleep Mode Current (typ.)
Industry Standard Configurations
Industrial Temperature -40°C to +85°C
8-pin “Green”/RoHS SOIC Package
Description
The FM25V10 is a 1-megabit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by Serial
Flash and other nonvolatile memories.
Unlike Serial Flash, the FM25V10 performs write
operations at bus speed. No write delays are incurred.
Data is written to the memory array immediately
after it has been transferred to the device. The next
bus cycle may commence without the need for data
polling. The product offers very high write
endurance, orders of magnitude more endurance than
Serial Flash. Also, F-RAM exhibits lower power
consumption than Serial Flash.
These capabilities make the FM25V10 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of Serial Flash can
cause data loss.
The FM25V10 provides substantial benefits to users
of Serial Flash as a hardware drop-in replacement.
The devices use the high-speed SPI bus, which
enhances the high-speed write capability of F-RAM
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
technology. The FM25VN10 is offered with a unique
serial number that is read-only and can be used to
identify a board or system. Both devices incorporate
a read-only Device ID that allows the host to
determine the manufacturer, product density, and
product revision. The devices are guaranteed over an
industrial temperature range of -40°C to +85°C.
Pin Configuration
S
Q
W
VSS
Pin Name
/S
/W
/HOLD
C
D
Q
VDD
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
C
D
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 2.0
May 2010
Page 1 of 16
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